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首页> 外文期刊>Advanced energy materials >Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction
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Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

机译：具有纳米晶硅复合结的整体钙钛矿/硅串联太阳能电池中的改进光学性能

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摘要

Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm(-2). In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J-V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm(2) monolithic tandem cell with a steady-state efficiency of 18%.
机译：钙钛矿/硅串联太阳能电池已被公认为是下一代光伏电池的有希望的候选者，其性能超过单结极限，且生产成本可能较低。当前用于单片双极的设计依赖于透明导电氧化物作为中间复合层，这导致光学损失和降低的分流电阻。展示了一种改进的基于纳米晶硅层的复合结，可减轻这些损失。当用于具有平坦正面的整体钙钛矿/硅异质结串联电池中时，发现该结会增加底部电池的光电流超过1 mA cm（-2）。与基于铯的钙钛矿顶部电池结合使用时，从J-V测量获得的串联电池功率转换效率高达22.7％，而在最大功率点跟踪期间的稳态效率高达22.0％。由于其较低的横向电导率，纳米晶硅复合结能够实现整体钙钛矿/硅异质结串联电池的按比例放大，从而产生具有稳定状态效率18％的12.96 cm（2）整体电池。

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  • 来源
    《Advanced energy materials》 |2018年第6期|1701609.1-1701609.8|共8页
  • 作者

    Sahli Florent; Kamino Brett A.; Werner Jeremie; Brauninger Matthias; Paviet-Salomon Bertrand; Barraud Loris; Monnard Raphael; Seif Johannes Peter; Tomasi Andrea; Jeangros Quentin; Hessler-Wyser Aicha; De Wolf Stefaan; Despeisse Matthieu; Nicolay Sylvain; Niesen Bjoern; Ballif Christophe;

  • 作者单位

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland|CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland|Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland|KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia;

    CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland|CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

    EPFL, Inst Microengn IMT, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland|CSEM, PV Ctr, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    microcrystalline; multijunction; organic-inorganic perovskite; silicon heterojunction; tunnel junction;

    机译：微晶;多结;有机-无机钙钛矿;硅异质结;隧道结;

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