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首页> 外文期刊>Advanced energy materials >Surface Engineering of TiO_2 ETL for Highly Efficient and Hysteresis-Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open-Circuit Voltage and Stability
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Surface Engineering of TiO_2 ETL for Highly Efficient and Hysteresis-Less Planar Perovskite Solar Cell (21.4%) with Enhanced Open-Circuit Voltage and Stability

机译：TiO_2 ETL的表面工程技术，用于高效且无滞后的平面钙钛矿太阳能电池（21.4％），具有增强的开路电压和稳定性

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摘要

Interfacial studies and band alignment engineering on the electron transport layer (ETL) play a key role for fabrication of high-performance perovskite solar cells (PSCs). Here, an amorphous layer of SnO2 (a-SnO2) between the TiO2 ETL and the perovskite absorber is inserted and the charge transport properties of the device are studied. The double-layer structure of TiO2 compact layer (c-TiO2) and a-SnO2 ETL leads to modification of interface energetics, resulting in improved charge collection and decreased carrier recombination in PSCs. The optimized device based on a-SnO2/c-TiO2 ETL shows a maximum power conversion efficiency (PCE) of 21.4% as compared to 19.33% for c-TiO2 based device. Moreover, the modified device demonstrates a maximum open-circuit voltage (V-oc) of 1.223 V with 387 mV loss in potential, which is among the highest reported value for PSCs with negligible hysteresis. The stability results show that the device on c-TiO2/a-SnO2 retains about 91% of its initial PCE value after 500 h light illumination, which is higher than pure c-TiO2 (67%) based devices. Interestingly, using a-SnO2/c-TiO2 ETL the PCE loss was only 10% of initial value under continuous UV light illumination after 30 h, which is higher than that of c-TiO2 based device (28% PCE loss).
机译：电子传输层（ETL）上的界面研究和能带对准工程对高性能钙钛矿太阳能电池（PSC）的制造起着关键作用。在此，在TiO2 ETL和钙钛矿吸收体之间插入了SnO2（a-SnO2）非晶层，并研究了器件的电荷传输性能。 TiO2致密层（c-TiO2）和a-SnO2 ETL的双层结构导致界面能的改变，从而改善了PSC中的电荷收集并减少了载流子复合。基于a-SnO2 / c-TiO2 ETL的优化器件显示最大功率转换效率（PCE）为21.4％，而基于c-TiO2的器件为19.33％。此外，改进后的器件显示最大开路电压（V-oc）为1.223 V，电位损失为387 mV，这是滞后值可忽略的PSC的最高报告值。稳定性结果表明，在c-TiO2 / a-SnO2上的器件在500h光照后仍保持其初始PCE值的91％，高于纯c-TiO2（67％）器件。有趣的是，使用α-SnO2/ c-TiO2 ETL，在30 h后连续紫外光照射下，PCE损耗仅为初始值的10％，高于基于c-TiO2的器件的PCE损耗（PCE损耗为28％）。

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