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Tin Oxide as a Protective Heterojunction with Silicon for Efficient Photoelectrochemical Water Oxidation in Strongly Acidic or Alkaline Electrolytes

机译:氧化锡作为硅的保护性异质结,可在强酸性或碱性电解质中有效地进行光电化学水氧化

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Photoelectrodes without a p-n junction are often limited in efficiency by charge recombination at semiconductor surfaces and slow charge transfer to electrocatalysts. This study reports that tin oxide (SnOx) layers applied to n-Si wafers after forming a thin chemically oxidized SiOx layer can passivate the Si surface while producing approximate to 620 mV photovoltage under 100 mW cm(-2) of simulated sunlight. The SnOx layer makes ohmic contacts to Ni, Ir, or Pt films that act as precatalysts for the oxygen-evolution reaction (OER) in 1.0 m KOH(aq) or 1.0 (M) H2SO4(aq). Ideal regenerative solar-to-O-2(g) efficiencies of 4.1% and 3.7%, respectively, are obtained in 1.0 m KOH(aq) with Ni or in 1.0 m H2SO4(aq) with Pt/IrOx layers as OER catalysts. Stable photocurrents for 100 h are obtained for electrodes with patterned catalyst layers in both 1.0 (M) KOH(aq) and 1.0 m H2SO4(aq).
机译:没有p-n结的光电极通常会受到效率的限制,这是由于半导体表面的电荷复合以及缓慢的电荷转移到电催化剂所致。这项研究报告称,在形成薄的化学氧化的SiOx层后,将氧化锡(SnOx)层应用于n-Si晶片可以钝化Si表面,同时在100 mW cm(-2)的模拟阳光下产生大约620 mV的光电压。 SnOx层与Ni,Ir或Pt膜形成欧姆接触,这些膜充当1.0 m KOH(aq)或1.0(M)H2SO4(aq)中的氧演化反应(OER)的预催化剂。在1.0 m KOH(aq)中使用Ni或1.0 m H2SO4(aq)中使用Pt / IrOx层作为OER催化剂,分别获得4.1%和3.7%的理想再生太阳能到O-2(g)的效率。对于具有图案化催化剂层的电极,在1.0(M)KOH(aq)和1.0 m H2SO4(aq)中均获得了> 100 h的稳定光电流。

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