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首页> 外文期刊>Advanced energy materials >Engineering Processes at the Interface of p-Semiconductor for Enhancing the Open Circuit Voltage in p-Type Dye-Sensitized Solar Cells
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Engineering Processes at the Interface of p-Semiconductor for Enhancing the Open Circuit Voltage in p-Type Dye-Sensitized Solar Cells

机译：p半导体界面上用于增强p型染料敏化太阳能电池开路电压的工程过程

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摘要

To prevent the interfacial charge recombination between injected holes in the valence band and the redox mediator in the electrolyte in p-type dye sensitized solar cells (p-DSSC) the passivation of the recombination sites by organic insulator chenodeoxycholic acid (CDCA) layer is critically investigated in this study. Rather than classical coating of the semiconductor's surface by simultaneous co-adsorption of CDCA during the dyeing step, two other methods are investigated. The first consists in dissolving CDCA in the electrolyte, while the second consists in spin coating an ethanol solution of CDCA onto the already dyed photocathode. In this study, different sensitizers, electrolytes, and p-SCs, (NiO, CuGaO2) are explored. Analysis of the current/voltage curves and electrochemical impedance spectroscopy provides evidence that the role of the CDCA layer is to create a physical barrier to prevent the approach of the redox mediator from the NiO surface and consequently raise the open circuit voltage (V-oc). The important finding of this study is the demonstration that the V-oc in p-DSSC is heavily limited by interfacial charge recombination and that higher V-oc values much above 100 mV and as high as 500 mV can be attained with conventional materials (NiO) if this deleterious side reaction can be suppressed or diminished.
机译：为了防止价带中注入的空穴与p型染料敏化太阳能电池（p-DSSC）中电解质中的氧化还原介体之间的界面电荷复合，有机绝缘子鹅去氧胆酸（CDCA）层对复合位点的钝化至关重要在这项研究中进行了调查。研究了另外两种方法，而不是在染色步骤中通过同时共吸附CDCA来对半导体表面进行经典涂覆。第一种是将CDCA溶解在电解质中，第二种是将CDCA的乙醇溶液旋涂到已经染色的光电阴极上。在这项研究中，探索了不同的敏化剂，电解质和p-SCs（NiO，CuGaO2）。对电流/电压曲线和电化学阻抗谱的分析提供了证据，表明CDCA层的作用是建立物理屏障，以防止氧化还原介体从NiO表面接近并因此提高开路电压（V-oc） 。这项研究的重要发现是证明了p-DSSC中的V-oc受界面电荷复合的严重限制，并且使用常规材料可以获得更高的V-oc值，远高于100 mV甚至高达500 mV（NiO ）是否可以抑制或减少这种有害的副反应。

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  • 来源
    《Advanced energy materials》 |2017年第12期|1601776.1-1601776.11|共11页
  • 作者

    Favereau Ludovic; Pellegrin Yann; Hirsch Lionel; Renaud Adele; Planchat Aurelien; Blart Errol; Louarn Guy; Cario Laurent; Jobic Stephane; Boujtita Mohammed; Odobel Fabrice;

  • 作者单位

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

    Univ Bordeaux, IMS, UMR 5218, 351 Cours Liberat, F-33400 Talence, France|CNRS, IMS, UMR 5218, F-33400 Talence, France;

    Univ Nantes, Inst Mat Jean Rouxel, 2 Rue Houssiniere,BP 32229, F-44322 Nantes 03, France;

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

    Univ Nantes, Inst Mat Jean Rouxel, 2 Rue Houssiniere,BP 32229, F-44322 Nantes 03, France;

    Univ Nantes, Inst Mat Jean Rouxel, 2 Rue Houssiniere,BP 32229, F-44322 Nantes 03, France;

    Univ Nantes, Inst Mat Jean Rouxel, 2 Rue Houssiniere,BP 32229, F-44322 Nantes 03, France;

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

    Univ LUNAM, Univ Nantes, CNRS, CEISAM,UMR 6230, 2 Rue Houssiniere,BP 92208, F-44322 Nantes 2, France;

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  • 正文语种 eng
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  • 关键词

    charge recombination; dye sensitized solar cells; impedance spectroscopy; surface passivation;

    机译：电荷重组染料敏化太阳能电池阻抗谱表面钝化;

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