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Three-Stage Inter-Orthorhombic Evolution and High Thermoelectric Performance in Ag-Doped Nanolaminar SnSe Polycrystals

机译:Ag掺杂纳米层SnSe多晶体的三阶段正交晶间演化和高热电性能

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摘要

The ultrahigh thermoelectric performance of SnSe-based single crystals has attracted considerable interest in their polycrystalline counterparts. However, the temperature-dependent structural transition in SnSe-based thermoelectric materials and its relationship with their thermoelectric performance are not fully investigated and understood. In this work, nanolaminar SnSe polycrystals are prepared and characterized in situ using neutron and synchrotron powder diffraction measurements at various temperatures. Rietveld refinement results indicate that there is a complete inter-orthorhombic evolution from Pnma to Cmcm by a series of layer slips and stretches along the a-and b-axes over a 200 K temperature range. This phase transition leads to drastic enhancement of the carrier concentration and phonon scattering above 600 K. Moreover, the unique nanolaminar structure effectively enhances the carrier mobility of SnSe. Their grain and layer boundaries further improve the phonon scattering. These favorable factors result in a high ZT of 1.0 at 773 K for pristine SnSe polycrystals. The thermoelectric performances of polycrystalline SnSe are further improved by p-type and n-type dopants (i.e., doped with Ag and SnCl2, respectively), and new records of ZT are achieved in Ag0.015Sn0.985Se (ZT of 1.3 at 773 K) and SnSe0.985Cl0.015 (ZT of 1.1 at 773 K) polycrystals.
机译:SnSe基单晶的超高热电性能已吸引了多晶同行的关注。但是,尚未充分研究和理解基于SnSe的热电材料中与温度有关的结构转变及其与热电性能的关系。在这项工作中,制备了纳米层状的SnSe多晶体,并在不同温度下使用中子和同步加速器粉末衍射测量进行了原位表征。 Rietveld精炼结果表明,在200 K的温度范围内,沿a轴和b轴发生一系列层滑和伸展,从Pnma到Cmcm有完整的斜方晶间演化。这种相变导致载流子浓度急剧增加,超过600 K时声子散射增大。此外,独特的纳米层状结构有效地提高了SnSe的载流子迁移率。它们的晶粒和层边界进一步改善了声子的散射。这些有利因素导致了原始SnSe多晶在773 K时的高ZT为1.0。 p型和n型掺杂剂(即分别掺杂有Ag和SnCl2)进一步提高了多晶SnSe的热电性能,在Ag0.015Sn0.985Se中获得了ZT的新记录(在773 K下ZT为1.3) )和SnSe0.985Cl0.015(在773 K时ZT为1.1)多晶。

著录项

  • 来源
    《Advanced energy materials》 |2017年第19期|1700573.1-1700573.12|共12页
  • 作者单位

    Univ Wollongong, Inst Superconducting & Elect Mat, Sq Way, North Wollongong, NSW 2500, Australia;

    Univ Wollongong, Inst Superconducting & Elect Mat, Sq Way, North Wollongong, NSW 2500, Australia;

    Soochow Univ, Sch Radiat Med & Radiat Protect, Collaborat Innovat Ctr Radiat Med Jiangsu Higher, Suzhou Ind Pk,199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Kunming Univ Sci & Technol, Fac Mat Sci & Technol, 68 Wenchang Rd, Kunming 650093, Yunnan, Peoples R China;

    Univ Wollongong, Inst Superconducting & Elect Mat, Sq Way, North Wollongong, NSW 2500, Australia;

    Kunming Univ Sci & Technol, Fac Mat Sci & Technol, 68 Wenchang Rd, Kunming 650093, Yunnan, Peoples R China;

    Univ Wollongong, Inst Superconducting & Elect Mat, Sq Way, North Wollongong, NSW 2500, Australia|Soochow Univ, Sch Radiat Med & Radiat Protect, Collaborat Innovat Ctr Radiat Med Jiangsu Higher, Suzhou Ind Pk,199 Ren Ai Rd, Suzhou 215123, Peoples R China;

    Univ Wollongong, Inst Superconducting & Elect Mat, Sq Way, North Wollongong, NSW 2500, Australia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    doping; phase transition; thermoelectrics; tin selenides;

    机译:掺杂;相变;热电学;硒化锡;

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