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首页> 外文期刊>Advanced energy materials >Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration
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Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

机译：通过优化载流子浓度的Cr掺杂增强n型PbSe的热电性能

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摘要

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm2 V−1s−1 at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈1018–1019 cm−3. Even though the highest room temperature power factor ≈3.3 × 10−3 W m−1 K−2 is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb0.9925Cr0.0075Se and ≈673 K for Pb0.995Cr0.005Se. The calculated device efficiency of Pb0.995Cr0.005Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature.
机译：发现Ti，V，Cr，Nb和Mo可有效提高600 K以下温度下n型PbSe的塞贝克系数和功率因数。发现较高的Seebeck系数和功率因数是由于霍尔效应较高引起的在较低的载流子浓度下，迁移率≈1000cm2 V-1s-1。通过将载流子浓度优化至≈1018–1019 cm-3，可以获得更大的平均ZT值（与应用有关）。即使在1at％的Mo掺杂PbSe中发现最高的室温功率因数≈3.3×10-3 W m-1 K-2，但在Cr掺杂的PbSe中实现了最高的ZT。结合较低的热导率，ZT在室温下提高到≈0.4，在Pb0.9925Cr0.0075Se的约573 K和Pb0.995Cr0.005Se的约673 K时，峰值ZT约为1.0。冷端300 K和热端873 K时，Pb0.995Cr0.005Se的计算器件效率高达≈12.5％，高于文献中报道的所有n型PbSe材料的效率。

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