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Optimum Carrier Concentration in n-Type PbTe Thermoelectrics

机译：n型PbTe热电器件中的最佳载流子浓度

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摘要

Taking La- and I-doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La-doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X-ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well-described by a self-consistent single non-parabolic Kane band model that yields an approximate (m*T)1.5 dependence of the optimal carrier concentration for a peak power factor in both doping cases. Such a simple temperature dependence also provides an effective approximation of carrier concentration for a peak zT and helps to explain, the effects of other strategies such as lowering the lattice thermal conductivity by nanostructuring or alloying in n-PbTe, which demonstrates a practical guide for fully optimizing thermoelectric materials in the entire temperature range. The principles used here should be equally applicable to other thermoelectric materials.
机译：以La和I掺杂的PbTe为例，当前的工作显示了通过控制掺杂水平来优化热电性能因数zT的效果。高掺杂效率使载流子浓度得以精确设计和控制，以控制费米能级。除费米能量调谐外，La掺杂还可以改变导带，从而导致有效质量的密度增加，这可以通过传输，红外反射和硬X射线光电子能谱测量得到证实。考虑到这样的能带结构修改效应，然后可以通过自洽的单个非抛物线凯恩带模型很好地描述电输运特性，该模型可以得出最佳载流子浓度的近似（m * T）1.5依赖性。两种掺杂情况下的峰值功率因数。这种简单的温度依赖性还可以为zT峰值提供有效的载流子浓度近似值，并有助于解释其他策略的影响，例如通过纳米结构化或在n-PbTe中合金化来降低晶格热导率，这为充分利用硅酸铝提供了实用指南。在整个温度范围内优化热电材料。此处使用的原理应同样适用于其他热电材料。

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