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首页> 外文期刊>Advanced energy materials >Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices
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Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

机译：p型CdS纳米线的超高迁移性：表面电荷转移掺杂和光伏器件

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摘要

Low-dimensional single-crystalline semiconductor nanostruc-tures have emerged as ideal building blocks in various powerful nano-devices due to their superior optical, physical and electrical properties over traditional thin film and bulk materials. Cadmium sulfide (CdS), as an important Ⅱ-Ⅵ semiconductor with a wide direct band-gap of 2.42 eV at room temperature, is of particular interest as it can function as important building blocks for wide-ranging nano-electronic and nano-optoelec-tronic devices. Thus far, low-dimensional CdS nanostructures, such as quantum dots (QDs), nanowires (NWs), nanoribbons (NRs), and nanotubes (NTs), have been successfully prepared using thermal evaporation, solvothermal process, polymer-assisted chemical method and so on. Based on these CdS nanostructures, a wide range of nano-devices and nano-systems, including metal semiconductor field-effect transistors (MES-FETs), logic circuits, Schottky junction diode, hydrogen generator, and solar cell have been explored.
机译：低维单晶半导体纳米结构由于在光学，物理和电学方面优于传统的薄膜和块状材料，已成为各种功能强大的纳米器件中的理想构件。硫化镉（CdS）作为一种重要的Ⅱ-Ⅵ型半导体，在室温下具有2.42 eV的宽直接带隙，由于它可以作为广泛的纳米电子和纳米光电学的重要组成部分而受到特别关注电子设备。迄今为止，已经通过热蒸发，溶剂热法，聚合物辅助化学方法和化学方法成功地制备了低维CdS纳米结构，例如量子点（QDs），纳米线（NWs），纳米带（NRs）和纳米管（NTs）。以此类推。基于这些CdS纳米结构，已经开发了各种纳米器件和纳米系统，包括金属半导体场效应晶体管（MES-FET），逻辑电路，肖特基结二极管，氢发生器和太阳能电池。

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  • 来源
    《Advanced energy materials》 |2013年第5期|579-583|共5页
  • 作者

    Fang-Ze Li; Lin-Bao Luo; Qimg-Dan Yang; Di Wu; Chao Xie; Biao Nie; Jian-ShengJie; Chun-Yon Wu; Li Wang; Shu-Hong Yu;

  • 作者单位

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University Suzhou, Jiangsu 215123, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    School of Electronic Science and Applied Physics Hefei University of Technology Hefei, Anhui 230009, P. R. China;

    Division of Nanomaterials and Chemistry Hefei National Laboratory for Physical Sciences at Microscale Department of Chemistry University of Science and Technology of China Hefei, Anhui 230026, P. R. China;

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