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Formation of CuInSe_2 and CuGaSe_2 Thin Films Deposited by Three-Stage Thermal Co-Evaporation: A Real-Time X-Ray Diffraction and Fluorescence Study

机译:三阶段热共蒸发沉积CuInSe_2和CuGaSe_2薄膜的形成:实时X射线衍射和荧光研究

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摘要

Thin film solar cells based on co-evaporated Cu(In,Ca)Se_2 absorber films present the highest efficiencies among current polycrystalline thin-film technologies. Thanks to the development of a novel experimental setup for in situ growth studies, it was possible to follow the formation of the crystalline phases during such deposition processes for the first time. This synchrotron-based energy-dispersive X-ray diffraction and fluorescence setup is suited for real-time studies of thin film vapor deposition processes. Focusing on the growth of CuInSe_2 and CuCaSe_2 fabricated by three-stage processing, we find that the phase transitions in the Cu-In-Se system follow the reported pseudo-binary In_2Se_3-Cu_2Se phase diagram. This requires a transformation of the Se sublattice during the incorporation of Cu-Se into the In_2Se_3 precursor film from the first process stage. In the Cu-Ca-Se system, besides an increase in the lattice spacings, we observe no transformation of the Se sublattice. Furthermore, the structural defects of the Ca-Se precursor film are preserved until the CuCaSe_2 stoichiometry is reached. By means of model calculations of the fluorescence signals, we confirm in both systems the segregation of Cu_2Se at the surface near a concentration of 25 at.% Cu shortly after the recrystallization of the films. The modeling also reveals that Cu_2Se penetrates into the CuInSe_2 film, whereas it remains at the surface of the CuCaSe_2 film.
机译:在目前的多晶薄膜技术中,基于共蒸发Cu(In,Ca)Se_2吸收膜的薄膜太阳能电池具有最高的效率。由于开发了用于原位生长研究的新型实验装置,因此有可能首次在这种沉积过程中追踪结晶相的形成。这种基于同步加速器的能量色散X射线衍射和荧光设置适用于薄膜气相沉积过程的实时研究。着眼于通过三阶段工艺制造的CuInSe_2和CuCaSe_2的生长,我们发现Cu-In-Se系统中的相变遵循报道的伪二进制In_2Se_3-Cu_2Se相图。这要求从第一工艺阶段开始将Cu-Se掺入In_2Se_3前驱体膜中,然后将Se子晶格转变。在Cu-Ca-Se系统中,除了晶格间距的增加之外,我们没有观察到Se亚晶格的转变。此外,保留了Ca-Se前体膜的结构缺陷,直到达到CuCaSe_2化学计量比为止。通过荧光信号的模型计算,我们在两个系统中都确认了薄膜重结晶后不久,Cu_2Se在浓度接近25 at。%Cu的表面偏析。该模型还揭示了Cu_2Se渗透到CuInSe_2膜中,而仍保留在CuCaSe_2膜的表面。

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  • 来源
    《Advanced energy materials》 |2013年第10期|1381-1387|共7页
  • 作者单位

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany,International Iberian Nanotechnology Laboratory Avenida Mestre Jose Veiga s, 4715-330 Braga, Portugal;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

    Helmholtz-Zentrum Berlin Hahn-Meitner Platz 1, 14109 Berlin, Germany;

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