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Atomic Layer Deposition of CdS Quantum Dots for Solid-State Quantum Dot Sensitized Solar Cells

机译：用于固态量子点敏化太阳能电池的CdS量子点的原子层沉积

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摘要

Functioning quantum dot (QD) sensitized solar cells have been fabricated using the vacuum deposition technique atomic layer deposition (ALD). Utilizing the incubation period of CdS growth by ALD on TiO2, we are able to grow QDs of adjustable size which act as sensitizers for solid-state QD-sensitized solar cells (ssQDSSC). The size of QDs, studied with transmission electron microscopy (TEM), varied with the number of ALD cycles from 1-10 nm. Photovoltaic devices with the QDs were fabricated and characterized using a ssQDSSC device architecture with 2,2',7,7'-tetrakis-(N,N-di-p methoxyphenylamine) 9,9'-spirobifluorene (spiro-OMeTAD) as the solid-state hole conductor. The ALD approach described here can be applied to fabrication of quantum-confined structures for a variety of applications, including solar electricity and solar fuels. Because ALD provides the ability to deposit many materials in very high aspect ratio substrates, this work introduces a strategy by which material and optical properties of QD sensitizers may be adjusted not only by the size of the particles but also in the future by the composition.
机译：使用真空沉积技术原子层沉积（ALD）可以制造功能量子点（QD）敏化太阳能电池。利用ALD在TiO2上CdS生长的潜伏期，我们能够生长出可调节大小的QD，用作固态QD敏化太阳能电池（ssQDSSC）的敏化剂。用透射电子显微镜（TEM）研究的量子点尺寸随ALD循环数从1-10 nm变化。使用具有2D，2'，7、7'-四-（N，N-二-对甲氧基苯胺）9,9'-螺双芴（spiro-OMeTAD）的ssQDSSC器件架构来制造和表征具有QD的光伏器件固态空穴导体。此处描述的ALD方法可以应用于量子限制结构的制造，以用于各种应用，包括太阳能和太阳能。因为ALD提供了在高深宽比的基板上沉积许多材料的能力，所以这项工作提出了一种策略，通过该策略，不仅可以通过粒子的大小来调整QD敏化剂的材料和光学性质，而且将来还可以通过成分来调整。

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