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Humidity-Controlled Ultra low Power Layer-by-Layer Thinning, Nanopatterning and Bandgap Engineering of MoTe_2

机译:MoTe_2的湿度控制超低功耗逐层减薄,纳米图案和带隙工程

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摘要

A highly effective laser thinning method is demonstrated to accurately control the thickness of MoTe2 layers. By utilizing the humidity present in the ambient atmosphere, multilayered MoTe2 films can be uniformly thinned all the way down to mono-layer with layer-by-layer precision using an ultralow laser power density of 0.2 mW mu m(-2). Localized bandgap engineering is also performed in MoTe2, by creating regions with different bandgaps on the same film, enabling the formation of lateral homojunctions with sub-200 nm spatial resolution. Field-effect transistors fabricated from these thinned layers exhibit significantly improved electrical properties with an order of magnitude increase in on/off current ratios, along with enhancements in on-current and field-effect mobility values. Thinned devices also exhibit the fastest photoresponse (45 mu s) for an MoTe2-based visible photodetector reported to date, along with a high photoresponsivity. A highly sensitive monolayer MoTe2 photodetector is also reported. These results demonstrate the efficiency of the presented thinning approach in producing high-quality MoTe2 films for electronic and optoelectronic applications.
机译:事实证明,一种高效的激光薄化方法可精确控制MoTe2层的厚度。通过利用周围大气中存在的湿度,可以使用0.2 mWμm(-2)的超低激光功率密度,以逐层精度将多层MoTe2薄膜均匀地均匀薄至单层。通过在同一膜上创建具有不同带隙的区域,还可以在MoTe2中执行局部带隙工程设计,从而可以形成空间分辨率低于200 nm的横向同质结。由这些薄层制成的场效应晶体管显示出显着改善的电性能,其开/关电流比增加了一个数量级,同时导通电流和场效应迁移率值也提高了。对于迄今为止报道的基于MoTe2的可见光探测器,薄型设备还表现出最快的光响应(45μs),以及高光响应性。还报道了一种高度敏感的单层MoTe2光电探测器。这些结果证明了所提出的薄化方法在生产用于电子和光电应用的高质量MoTe2薄膜中的效率。

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