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首页> 外文期刊>Advanced Functional Materials >Room-Temperature Ferroelectricity in Hexagonally Layered α-In_2Se_3 Nanoflakes down to the Monolayer Limit
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Room-Temperature Ferroelectricity in Hexagonally Layered α-In_2Se_3 Nanoflakes down to the Monolayer Limit

机译：六角形分层α-In_2Se_3纳米薄片中的室温铁电直至单层极限

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摘要

2D ferroelectric material has emerged as an attractive building block for high density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking alpha-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal alpha-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (approximate to 1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H alpha-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.
机译：二维铁电材料已成为高密度数据存储纳米器件的有吸引力的构建基块。尽管从理论上已经预测了单层范德华铁电体，但是仍然没有实现用于这种计算的关键实验突破。在这里，六方堆积的α-In2Se3纳米片（很少研究的范德华多晶形物）据报道在室温下具有平面外（OOP）和平面内（IP）铁电。具有均匀厚度的六边形α-In2Se3纳米片中的铁电多畴态可以存活到6 nm。最引人注目的是，分别观察到电场感应的极化转换和磁滞回线直至双层和单层（约1.2 nm）厚度，这将其指定为最薄的铁电层并验证了相应的理论计算。此外，开发了两种在2H alpha-In2Se3中采用OOP和IP极化的铁电纳米器件，它们适用于非易失性存储器和基于异质结构的纳米电子/光电。

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  • 来源
    《Advanced Functional Materials》 |2018年第50期|1803738.1-1803738.7|共7页
  • 作者

    Xue Fei; Hu Weijin; Lee Ko-Chun; Lu Li-Syuan; Zhang Junwei; Tang Hao-Ling; Han Ali; Hsu Wei-Ting; Tu Shaobo; Chang Wen-Hao; Lien Chen-Hsin; He Jr-Hau; Zhang Zhidong; Li Lain-Jong; Zhang Xixiang;

  • 作者单位

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China;

    Natl TsingHua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan;

    Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan;

    Natl TsingHua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan;

    King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

    Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia|TSMC, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia;

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  • 正文语种 eng
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  • 关键词

    hexagonal alpha-In2Se3; layered 2D materials; monolayer; room-temperature ferroelectricity;

    机译：六方α-In2Se3;层状二维材料;单层;室温铁电;

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