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Embedded Dipole Self-Assembled Monolayers for Contact Resistance Tuning in p-Type and n-Type Organic Thin Film Transistors and Flexible Electronic Circuits

机译：用于p型和n型有机薄膜晶体管及柔性电子电路中接触电阻调谐的嵌入式偶极自组装单分子膜

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摘要

Based on the powerful concept of embedded dipole self-assembled monolayers (SAMs), highly conductive interfacial layers are designed, which allow tuning the contact resistance of organic thin-film transistors over three orders of magnitude with minimum values well below 1 k omega cm. This not only permits the realization of highly competitive p-type (pentacene-based) devices on rigid as well as flexible substrates, but also enables the realization of n-type (C-60-based) transistors with comparable characteristics utilizing the same electrode material (Au). As prototypical examples for the high potential of the presented SAMs in more complex device structures, flexible organic inverters with static gains of 220 V/V and a 5-stage ring-oscillator operated below 4 V with a stage frequency in the range of the theoretically achievable maximum are fabricated. Employing a variety of complementary experimental and modeling techniques, it is shown that contact resistances are reduced by i) eliminating the injection barrier through a suitable dipole orientation, and by ii) boosting the transmission of charge carriers through a deliberate reduction of the SAM thickness. Notably, the embedding of the dipolar group into the backbones of the SAM-forming molecules allows exploiting their beneficial effects without modifying the growth of the active layer.
机译：基于嵌入式偶极子自组装单分子层（SAMs）的强大概念，设计了高导电界面层，该界面层可将有机薄膜晶体管的接触电阻调整到三个数量级以上，且其最小值远低于1 kΩcm。这不仅允许在刚性和柔性衬底上实现高度竞争的p型（并五苯）器件，而且还可以利用同一电极实现具有可比特性的n型（C-60基）晶体管。材料（Au）。作为更复杂的器件结构中现有SAM的高潜力的典型示例，静态增益为220 V / V的柔性有机逆变器和工作在4 V以下的5级环形振荡器，其级频率在理论上的范围内可以达到的最大值。通过使用各种互补的实验和建模技术，可以显示出通过i）通过合适的偶极子方向消除注入势垒，以及ii）通过有意减小SAM厚度来提高电荷载流子的传输，可以降低接触电阻。值得注意的是，将偶极基团嵌入到形成SAM的分子的骨架中可以利用它们的有益作用，而无需改变活性层的生长。

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