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首页> 外文期刊>Advanced Functional Materials >Self-Driven Metal-Semiconductor-Metal WSe_2 Photodetector with Asymmetric Contact Geometries
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Self-Driven Metal-Semiconductor-Metal WSe_2 Photodetector with Asymmetric Contact Geometries

机译：具有非对称接触几何形状的自驱动金属半导体金属WSe_2光电探测器

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摘要

Self-driven photodetectors have wide applications in wireless sensor networks and wearable physiological monitoring systems. While 2D materials have different bandgaps for potential novel application fields, the self-driven photodetectors are mainly built on PN junctions or heterostructures, whose fabrication involves doping or reliable multiple transfer steps. In this study, a novel metal-semiconductor-metal (MSM) WSe2 photodetector with asymmetric contact geometries is proposed. A high responsivity of 2.31 A W-1 is obtained under zero bias, and a large open-circuit voltage of 0.42 V is achieved for an MSM photodetector with a large contact length difference. The MSM photodetector can overcome the disadvantage of high dark current in traditional MSM photodetectors. A small dark current of approximate to 1 fA along with a high detectivity of 9.16 x 10(11) Jones is achieved. The working principles and finite element analysis are presented to explain the origin of the self-driven property and its dependence on the degree of asymmetry.
机译：自驱动光电探测器在无线传感器网络和可穿戴生理监测系统中具有广泛的应用。尽管2D材料在潜在的新型应用领域具有不同的带隙，但自驱动光电探测器主要建立在PN结或异质结构上，其制造涉及掺杂或可靠的多次转移步骤。在这项研究中，提出了一种新型的具有非对称接触几何形状的金属-半导体-金属（MSM）WSe2光电探测器。在零偏压下可获得2.31 A W-1的高响应度，对于接触长度差较大的MSM光电探测器，可实现0.42 V的大开路电压。 MSM光电探测器可以克服传统MSM光电探测器中高暗电流的缺点。实现了大约1 fA的小暗电流以及9.16 x 10（11）Jones的高检测率。介绍了工作原理和有限元分析，以解释自驱动属性的起源及其对不对称程度的依赖性。

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