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首页> 外文期刊>Advanced Functional Materials >X-Ray Scattering Reveals Ion-Induced Microstructural Changes During Electrochemical Gating of Poly(3-Hexylthiophene)
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X-Ray Scattering Reveals Ion-Induced Microstructural Changes During Electrochemical Gating of Poly(3-Hexylthiophene)

机译：X射线散射揭示了聚（3-己基噻吩）的电化学门控期间离子诱导的微观结构变化。

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摘要

The heterogeneous microstructure of semicrystalline polymers complicates the relationship between their electrical conductivity and carrier concentration. Charge transport models typically describe conductivity with an assumption of uniform doping throughout the material. Here, the evolution in morphology and optoelectronic properties of poly(3-hexylthiophene) (P3HT) is reported as a function of carrier concentration in an organic electrochemical transistor using a polymeric ionic liquid (PIL) as the gate insulator. Operando grazing incidence X-ray scattering reveals that negatively charged ions from the dielectric first infiltrate the amorphous regions of the semiconductor, and then penetrate the crystalline regions at a critical carrier density of 4 x 10(20) cm(-3). Upon infiltration, the crystallites expand by 12% in the alkyl stacking direction and compress by 4% in the pi-pi stacking direction. The change in crystal structure of P3HT correlates with a sharply increasing effective carrier mobility. UV-visible spectroscopy reveals that holes induced in P3HT first reside in the crystalline regions of the polymer, which verifies that a charge carrier need not be in the same physical domain as its associated counterion. The dopant-induced morphological changes of P3HT rationalize the dependence of mobility on carrier concentration, suggesting a phase transition of crystalline regions at high carrier concentration.
机译：半结晶聚合物的异质微观结构使它们的电导率和载流子浓度之间的关系复杂化。电荷传输模型通常在整个材料均匀掺杂的前提下描述电导率。在这里，据报道，聚（3-己基噻吩）（P3HT）的形貌和光电性能的演变与使用聚合物离子液体（PIL）作为栅极绝缘体的有机电化学晶体管中载流子浓度的函数有关。 Operando掠入射X射线散射表明，来自电介质的带负电的离子首先渗透半导体的非晶区，然后以4 x 10（20）cm（-3）的临界载流子密度穿透晶体区。渗透后，微晶在烷基堆积方向上膨胀12％，在pi-pi堆积方向上压缩4％。 P3HT晶体结构的变化与有效载流子迁移率急剧增加有关。紫外可见光谱表明，在P3HT中诱导的空穴首先位于聚合物的晶体区域，这证明电荷载体不必与其相关的抗衡离子在同一物理域中。掺杂剂引起的P3HT形态变化合理化了迁移率对载流子浓度的依赖性，表明在高载流子浓度下晶体区域的相变。

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