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首页> 外文期刊>Advanced Functional Materials >Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
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Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

机译：面向低功耗和高密度数据存储的相变超晶格材料：微观图片，工作原理和优化

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摘要

To meet the requirement of big data era and neuromorphic computations, nonvolatile memory with fast speed, high density, and low power consumption is urgently needed. As an emerging technology, phase-change memory is a promising candidate to solve this problem. However, the drawback of the high power consumption hinders their applications. Most recently, a new phase-change material of [(GeTe)(x)/(Sb2Te3)(y)](n) superlattice attracts intensive attentions owing to its ultralow power consumption comparing with conventional phase-change memory devices. Many studies on this new material have been reported. However, there still lacks a comprehensive and unified understanding of its atomic picture and working mechanism. This article at first summarizes the broad applications for phase-change materials. Then, the major progresses of phase-change superlattices to understand the microscopic structure and working principles for data storage are discussed. Strategies on material optimizations to further enhance device performances are proposed. Finally, an outlook on new applications with these advanced superlattice materials is suggested.
机译：为了满足大数据时代和神经形态计算的需求，迫切需要具有快速，高密度和低功耗的非易失性存储器。作为一种新兴技术，相变存储器是解决该问题的有前途的候选人。但是，高功耗的缺点阻碍了它们的应用。最近，一种新型的[（GeTe）（x）/（Sb2Te3）（y）]（n）超晶格相变材料由于与传统相变存储器件相比具有超低功耗而受到广泛关注。关于这种新材料的许多研究已有报道。但是，对它的原子图和工作机制仍然缺乏全面统一的认识。本文首先总结了相变材料的广泛应用。然后，讨论了相变超晶格在理解数据存储的微观结构和工作原理方面的主要进展。提出了进一步优化器件性能的材料优化策略。最后，对这些先进的超晶格材料的新应用提出了展望。

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  • 来源
    《Advanced Functional Materials》 |2018年第44期|1803380.1-1803380.21|共21页
  • 作者

    Li Xian-Bin; Chen Nian-Ke; Wang Xue-Peng; Sun Hong-Bo;

  • 作者单位

    Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China;

    Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China;

    Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China;

    Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    big data; GeSbTe superlattice; low power consumption; nonvolatile memory; phase-change memory;

    机译：大数据;GeSbTe超晶格;低功耗;非易失性存储器;相变存储器;

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