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Improved Electrical Contact Properties of MoS_2-Graphene Lateral Heterostructure

机译：MoS_2-石墨烯横向异质结构的改善的电接触性能

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摘要

2D materials have been extensively investigated in view of their excellent electrical/optical properties, with particular attention directed at the fabrication of vertical or lateral heterostructures. Although such heterostructures exhibit unexpected or enhanced properties compared to those of singly used 2D materials, their fabrication is challenged by the difficulty of realizing spatial control and large area integration. Herein, MoS2 is grown on patterned graphene at variable temperatures, combining the concept of lateral heterostructure with chemical vapor deposition to realize large area growth with precise spatial control, and probe the spatial distribution of graphene and MoS2 by a number of instrumental techniques. The prepared MoS2-graphene lateral heterostructure is employed to construct field effect transistors with graphene as the source/drain and MoS2 as the channel, and the performance of these transistors (on/off ratio approximate to 10(9), maximum field effect mobility = 8.5 cm(2) V-1 s(-1)) is shown to exceed that of their MoS2-only counterparts.
机译：鉴于2D材料具有出色的电/光学特性，已经对其进行了广泛的研究，尤其是针对垂直或横向异质结构的制造。尽管与单独使用的2D材料相比，此类异质结构表现出出乎意料的性能或增强的性能，但其制造面临着难以实现空间控制和大面积集成的挑战。本文中，MoS2在图案化的石墨烯上以可变温度生长，将横向异质结构的概念与化学气相沉积相结合，以精确的空间控制实现大面积生长，并通过多种仪器技术探究了石墨烯和MoS2的空间分布。所制备的MoS2-石墨烯横向异质结构用于构建以石墨烯为源/漏和MoS2为沟道的场效应晶体管，并且这些晶体管的性能（开/关比约为10（9），最大场效应迁移率= 8.5 cm（2）V-1 s（-1））被证明超过了仅MoS2的对应物。

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  • 来源
    《Advanced Functional Materials》 |2019年第6期|1807550.1-1807550.8|共8页
  • 作者

    Hong Woonggi; Shim Gi Woong; Yang Sang Yoon; Jung Dae Yool; Choi Sung-Yool;

  • 作者单位

    Korea Adv Inst Sci & Technol, Sch Elect Engn, Ctr Adv Mat Discovery 3D Displays, Graphene 2D Mat Res Ctr, 291 Daehak Ro, Daejeon 34141, South Korea;

    Korea Adv Inst Sci & Technol, Sch Elect Engn, Ctr Adv Mat Discovery 3D Displays, Graphene 2D Mat Res Ctr, 291 Daehak Ro, Daejeon 34141, South Korea;

    Korea Adv Inst Sci & Technol, Sch Elect Engn, Ctr Adv Mat Discovery 3D Displays, Graphene 2D Mat Res Ctr, 291 Daehak Ro, Daejeon 34141, South Korea;

    Korea Adv Inst Sci & Technol, Sch Elect Engn, Ctr Adv Mat Discovery 3D Displays, Graphene 2D Mat Res Ctr, 291 Daehak Ro, Daejeon 34141, South Korea;

    Korea Adv Inst Sci & Technol, Sch Elect Engn, Ctr Adv Mat Discovery 3D Displays, Graphene 2D Mat Res Ctr, 291 Daehak Ro, Daejeon 34141, South Korea;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    chemical vapor deposition; contact resistance; graphene; lateral heterostructure; MoS2;

    机译：化学气相沉积;接触电阻;石墨烯;横向异质结构;MoS2;

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