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首页> 外文期刊>Advanced Functional Materials >Relaxor Behavior in Ordered Lead Magnesium Niobate (PbMg_(1/3)Nb_(2/3)O_3) Thin Films
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Relaxor Behavior in Ordered Lead Magnesium Niobate (PbMg_(1/3)Nb_(2/3)O_3) Thin Films

机译：铌酸铅镁（PbMg_（1/3）Nb_（2/3）O_3）薄膜的弛豫特性

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摘要

The local compositional heterogeneity associated with the short-range ordering of Mg and Nb in PbMg1/3Nb2/3O3 (PMN) is correlated with its characteristic relaxor ferroelectric behavior. Fully ordered PMN is not prepared as a bulk material. This work examines the relaxor behavior in PMN thin films grown at temperatures below 1073 K by artificially reducing the degree of disorder via synthesis of heterostructures with alternate layers of Pb(Mg2/3Nb1/3)O-3 and PbNbO3, as suggested by the random-site model. 100 nm thick, phase-pure films are grown epitaxially on (111) SrTiO3 substrates using alternate target timed pulsed-laser deposition of Pb(Mg2/3Nb1/3)O-3 and PbNbO3 targets with 20% excess Pb. Selected area electron diffraction confirms the emergence of (1/2, 1/2, 1/2) superlattice spots with randomly distributed ordered domains as large as approximate to 150 nm. These heterostructures exhibit a dielectric constant of 800, loss tangents of approximate to 0.03 and 2x remanent polarization of approximate to 11 mu C cm(-2) at room temperature. Polarization-electric field hysteresis loops, Rayleigh data, and optical second-harmonic generation measurements are consistent with the development of ferroelectric domains below 140 K. Temperature-dependent permittivity measurements demonstrate reduced frequency dispersion compared to short range ordered PMN films. This work suggests a continuum between normal and relaxor ferroelectric behavior in the engineered PMN thin films.
机译：与PbMg1 / 3Nb2 / 3O3（PMN）中的Mg和Nb的短程有序相关的局部组成异质性与其特征弛豫铁电行为相关。未将全额订购的PMN用作散装材料。这项工作通过随机交替合成Pb（Mg2 / 3Nb1 / 3）O-3和PbNbO3的异质结构，通过人工降低无序程度，研究了在低于1073 K的温度下生长的PMN薄膜中的弛豫行为，这是随机发现的。站点模型。使用交替的定时脉冲激光沉积Pb（Mg2 / 3Nb1 / 3）O-3和PbNbO3标靶（过量Pb为20％）在（111）SrTiO3衬底上外延生长100 nm厚的纯相膜。选定区域的电子衍射确认（1 / 2、1 / 2、1 / 2）超晶格点的出现，其随机分布的有序结构域的大小大约为150 nm。这些异质结构在室温下的介电常数为800，损耗角正切约为0.03，2x剩余极化约为11μC cm（-2）。极化电场磁滞回线，瑞利数据和二次谐波光学产生的测量结果均与140 K以下的铁电畴的发展相一致。与短程有序PMN薄膜相比，与温度有关的介电常数测量结果表明频率分散性降低。这项工作表明，在工程PMN薄膜中，正常铁电和弛豫铁电之间存在连续性。

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  • 来源
    《Advanced Functional Materials》 |2019年第5期|1804258.1-1804258.9|共9页
  • 作者

    Shetty Smitha; Damodaran Anoop; Wang Ke; Yuan Yakun; Gopalan Venkat; Martin Lane; Trolier-McKinstry Susan;

  • 作者单位

    Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA;

    Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA;

    Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA;

    Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA|Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA|Penn State Univ, Dept Engn Sci & Mech, 227 Hammond Bldg, University Pk, PA 16802 USA;

    Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA|Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA USA;

    Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA;

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  • 关键词

    ferroelectricity; random site model; relaxor; short- and long-range order; temperature-dependent Rayleigh analysis;

    机译：铁电;随机位点模型;松弛;短程和长程;温度相关瑞利分析;

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