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首页> 外文期刊>Advanced Functional Materials >Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing
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Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing

机译：非晶态忆阻器中用于非挥发性记忆和神经形态计算的加速离子运动

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摘要

Memristive devices based on mixed ionic-electronic resistive switches have an enormous potential to replace today's transistor-based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO3 with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen-ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO3 films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen-ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications.
机译：基于混合离子-电子电阻开关的忆阻器件具有非易失性信息存储和神经形态计算的能力，具有巨大的潜力来取代当今基于晶体管的存储器和冯·诺依曼计算架构。然而，仍然不清楚在高局部电场下离子载体如何在非晶氧化物膜中传播。通过使用基于LaFeO3的具有非晶或外延纳米结构的忆阻模型器件，我们设计了结构局部键合单元，并使非晶氧化物的氧离子扩散系数增加了一个数量级，从而影响了电阻切换操作。我们显示，仅基于无定形LaFeO3薄膜的设备显示出忆阻行为，因为它们的氧空位浓度增加。我们实现了稳定的电阻切换，切换时间降低到了几微秒，并确认主要是氧离子扩散特性而不是电子缺陷状态变化来调节电阻切换器件的响应。最终，这些结果表明，室温下无定形钙钛矿薄膜中结构键合单元的局部排列可用于很大程度上调节电阻开关（忆阻器）的氧空位（缺陷）动力学，这在理论上既难以预测，也有望在未来实现记忆和神经形态计算应用程序。

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  • 来源
    《Advanced Functional Materials》 |2019年第5期|1804782.1-1804782.12|共12页
  • 作者

    Schmitt Rafael; Kubicek Markus; Sediva Eva; Trassin Morgan; Weber Mads C.; Rossi Antonella; Hutter Herbert; Kreisel Jens; Fiebig Manfred; Rupp Jennifer L. M.;

  • 作者单位

    Swiss Fed Inst Technol, Dept Mat, Electrochem Mat, Honggerbergring 64, CH-8093 Zurich, Switzerland;

    Swiss Fed Inst Technol, Dept Mat, Electrochem Mat, Honggerbergring 64, CH-8093 Zurich, Switzerland|Tech Univ Wien, Inst Chem Technol & Analyt, Getreidemarkt 9-164EC, A-1060 Vienna, Austria;

    Swiss Fed Inst Technol, Dept Mat, Electrochem Mat, Honggerbergring 64, CH-8093 Zurich, Switzerland|MIT, Dept Mat Sci & Engn, Electrochem Mat, 77 Massachusetts Ave,8-242, Cambridge, MA 02139 USA;

    Swiss Fed Inst Technol, Dept Mat, Multifunct Ferro Mat, Vladimir Prelog Weg 1-5-10, CH-8093 Zurich, Switzerland;

    Swiss Fed Inst Technol, Dept Mat, Multifunct Ferro Mat, Vladimir Prelog Weg 1-5-10, CH-8093 Zurich, Switzerland|Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg|Univ Luxembourg, Phys & Mat Sci Res Unit, 41 Rue Brill, L-4422 Belvaux, Luxembourg;

    Univ Cagliari, Dipartimento Sci Chim & Geol, Via Univ 40, I-9124 Cagliari, Italy|Swiss Fed Inst Technol, Dept Mat, Lab Surface Sci & Technol, Vladimir Prelog Weg 5, CH-8093 Zurich, Switzerland;

    Tech Univ Wien, Inst Chem Technol & Analyt, Getreidemarkt 9-164EC, A-1060 Vienna, Austria;

    Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg|Univ Luxembourg, Phys & Mat Sci Res Unit, 41 Rue Brill, L-4422 Belvaux, Luxembourg;

    Swiss Fed Inst Technol, Dept Mat, Multifunct Ferro Mat, Vladimir Prelog Weg 1-5-10, CH-8093 Zurich, Switzerland;

    Swiss Fed Inst Technol, Dept Mat, Electrochem Mat, Honggerbergring 64, CH-8093 Zurich, Switzerland|MIT, Dept Mat Sci & Engn, Electrochem Mat, 77 Massachusetts Ave,8-242, Cambridge, MA 02139 USA|MIT, Dept Elect Engn & Comp Sci, Electrochem Mat, 77 Massachusetts Ave,8-242, Cambridge, MA 02139 USA;

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  • 正文语种 eng
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  • 关键词

    amorphous; LaFeO3; memristor; ReRAM; resistive switch;

    机译：非晶态;LaFeO3;忆阻器;ReRAM;电阻开关;

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