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Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

机译：通过工程铁磁剩余磁化的非易失性存储器的十种状态

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摘要

Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
机译：新兴的非易失性多级存储设备已被视为有前途的解决方案，可以满足不断增长的高密度存储器的低功耗需求。特别地，如果实现十个非易失性状态，则可以开发新计算机的十进制系统而不是二进制系统。在此，提出了一种通用的剩磁工程方法，用于实现多种可靠的磁和电阻状态，而不取决于特定的材料或器件结构。尤其是，作为概念证明，在室温下，具有强垂直磁各向异性的Co / Pt磁性多层膜和基于MgO的磁性隧穿结都揭示了基于铁磁剩余磁化作用的非易失性存储器的十种状态。考虑到铁磁体一直是促成信息革命的关键因素之一，因此，这种最新的剩磁工程方法在自旋电子学领域具有广阔的应用前景。

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  • 来源
    《Advanced Functional Materials》 |2019年第2期|1806460.1-1806460.5|共5页
  • 作者

    Zhong Hai; Wen Yan; Zhao Yuelei; Zhang Qiang; Huang Qikun; Chen Yanxue; Cai Jianwang; Zhang Xixiang; Li Run-Wei; Bai Lihui; Kang Shishou; Yan Shishen; Tian Yufeng;

  • 作者单位

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China|King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;

    Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China;

    King Abdullah Univ Sci & Technol, Phys Sci & Engn, Thuwal 239955, Saudi Arabia;

    Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China|Univ Jinan, Spintron Inst, Jinan 250022, Shandong, Peoples R China;

    Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    magnetic tunneling junctions; magnetoresistance; multilevel states; nonvolatile memory; remanent magnetization;

    机译：磁性隧道结;磁阻;多能态;非易失性存储器;剩余磁化;

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