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Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications

机译：用于灵敏光电探测器应用的二维二硒化钯的受控合成

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摘要

Palladium diselenide (PdSe2), a thus far scarcely studied group-10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures and electrical properties. Here, the controllable synthesis of wafer-scale and homogeneous 2D PdSe2 film is reported by a simple selenization approach. By choosing different thickness of precursor Pd layer, 2D PdSe2 with thickness of 1.2-20 nm can be readily synthesized. Interestingly, with the increase in thickness, obvious redshift in wavenumber is revealed by Raman spectroscopy. Moreover, in accordance with density functional theory (DFT) calculation, optical absorption and ultraviolet photoemission spectroscopy (UPS) analyses confirm that the PdSe2 exhibits an evolution from a semiconductor (monolayer) to semimetal (bulk). Further combination of the PdSe2 layer with Si leads to a highly sensitive, fast, and broadband photodetector with a high responsivity (300.2 mA W-1) and specific detectivity (approximate to 10(13) Jones). By decorating the device with black phosphorus quantum dots, the device performance can be further optimized. These results suggest the as-selenized PdSe2 is a promising material for optoelectronic application.
机译：二硒化钯（PdSe2），一种迄今很少被研究的第10组过渡金属二卤化硅，由于其独特的结构和电学性能，在未来的光电和电子设备中显示出令人鼓舞的潜力。在这里，通过简单的硒化方法报道了可控的晶圆级均匀2D PdSe2薄膜的合成。通过选择不同厚度的前驱体Pd层，可以容易地合成厚度为1.2-20nm的2D PdSe 2。有趣的是，随着厚度的增加，拉曼光谱显示出波数明显的红移。此外，根据密度泛函理论（DFT）计算，光吸收和紫外光发射光谱（UPS）分析证实PdSe2表现出从半导体（单层）到半金属（体）的演变。 PdSe2层与Si的进一步结合将导致具有高响应度（300.2 mA W-1）和特定检测率（约10（13）Jones）的高灵敏度，快速和宽带光电探测器。通过用黑磷量子点装饰器件，可以进一步优化器件性能。这些结果表明，硒化的PdSe2是用于光电应用的有前途的材料。

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  • 来源
    《Advanced Functional Materials》 |2019年第1期|1806878.1-1806878.9|共9页
  • 作者

    Zeng Long-Hui; Wu Di; Lin Sheng-Huang; Xie Chao; Yuan Hui-Yu; Lu Wei; Lau Shu Ping; Chai Yang; Luo Lin-Bao; Li Zhong-Jun; Tsang Yuen Hong;

  • 作者单位

    Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen, Guangdong, Peoples R China|Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Zhengzhou 450052, Henan, Peoples R China|Zhengzhou Univ, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Henan, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450052, Henan, Peoples R China;

    Hong Kong Polytech Univ, Univ Res Facil Mat Characterizat & Device Fabrica, Hung Hom, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China;

    Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen, Guangdong, Peoples R China|Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China;

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  • 关键词

    broadband photodetectors; density functional theory; heterojunction; photodetectors; transitional metal dichalcogenides;

    机译：宽带光电探测器密度泛函理论异质结光电探测器过渡金属二卤化物;

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