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Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

机译：通过载流子浓度控制改善石墨烯的射频传输性能，以用于高频传输线应用

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摘要

Graphene has been gradually studied as a high-frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene-based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect-induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high-frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh-frequency region.
机译：由于高载流子迁移率和频率独立性高达几太赫兹，石墨烯已被逐渐研究为高频传输线材料。然而，基于石墨烯的传输线由于其低载流子浓度而具有差的导电性。在此，观察到即使载流子浓度增加，缺陷引起的散射也会严重地阻碍射频（RF）传输性能。作为一种可能的解决方案，在高达110 GHz的高频区域研究了石墨烯上无定形碳的沉积。直流电阻降低了多达60％，RF传输特性也提高了3 dB。而且，无定形碳覆盖的石墨烯在恶劣环境下显示出稳定的性能。这些结果证明，载流子浓度控制是改善石墨烯的传输性能的有效且简便的方法。它开辟了将石墨烯用作超高频区域中的互连的可能性。

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  • 来源
    《Advanced Functional Materials》 |2019年第18期|1808057.1-1808057.11|共11页
  • 作者

    Yang Jae Hoon; Yang Hyoung Woo; Jun Byoung Ok; Shin Jeong Hee; Kim Seunguk; Jang A-Rang; Yoon Seong In; Shin Hyeon Suk; Park Deoksoo; Park Kyungho; Yoon Duhee; Sohn Jung Inn; Cha SeungNam; Kang Dae Joon; Jang Jae Eun;

  • 作者单位

    DGIST, Dept Informat & Commun Engn, 333 Techno Jungang Daero, Daegu 42988, South Korea;

    Sungkyunkwan Univ, Dept Phys, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea|Sungkyunkwan Univ, Inst Basic Sci, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea;

    DGIST, Dept Informat & Commun Engn, 333 Techno Jungang Daero, Daegu 42988, South Korea;

    DGIST, Dept Informat & Commun Engn, 333 Techno Jungang Daero, Daegu 42988, South Korea;

    DGIST, Dept Informat & Commun Engn, 333 Techno Jungang Daero, Daegu 42988, South Korea;

    UNIST, Dept Chem, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea|UNIST, Dept Energy Engn, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea;

    UNIST, Dept Chem, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea|UNIST, Dept Energy Engn, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea;

    UNIST, Dept Chem, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea|UNIST, Dept Energy Engn, Low Dimens Carbon Mat Ctr, UNIST Gil 50, Ulsan 44919, South Korea;

    Korea Adv Nano Fab Ctr KANC, Qual & Reliabil Assurance Dept, Convergence Technol Div, 109 Gwanggyo Ro, Suwon 16229, Gyeonggi Do, South Korea;

    Korea Adv Nano Fab Ctr KANC, Qual & Reliabil Assurance Dept, Convergence Technol Div, 109 Gwanggyo Ro, Suwon 16229, Gyeonggi Do, South Korea;

    IBS, Ctr Integrated Nanostruct Phys CINAP, Suwon 16419, South Korea;

    Univ Oxford, Dept Engn Sci, Parks Rd, Oxford OX1 3PJ, England|Dongguk Univ Seoul, Div Phys & Semicond Sci, 30 Pildong Ro 1 Gil, Seoul 04620, South Korea;

    Univ Oxford, Dept Engn Sci, Parks Rd, Oxford OX1 3PJ, England|Sungkyunkwan Univ, Dept Phys, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea;

    Sungkyunkwan Univ, Dept Phys, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea|Sungkyunkwan Univ, Inst Basic Sci, 2066 Seobu Ro, Suwon 16419, Gyeonggi Do, South Korea;

    DGIST, Dept Informat & Commun Engn, 333 Techno Jungang Daero, Daegu 42988, South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    amorphous carbon; charge transfer; doping; graphene; RF transmission line;

    机译：非晶碳电荷转移掺杂石墨烯射频传输线;

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