机译:临界温度高且磁化方向可控的二维三元硫族化物的本征半金属
Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China|Tsinghua Univ, TBSI, Low Dimens Mat & Devices Lab, Shenzhen 518055, Peoples R China;
Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China|Tsinghua Univ, TBSI, Low Dimens Mat & Devices Lab, Shenzhen 518055, Peoples R China;
Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China|Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China;
Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China|Tsinghua Univ, TBSI, Low Dimens Mat & Devices Lab, Shenzhen 518055, Peoples R China;
2D materials; first-principles calculations; half-metallicity; spintronics; ternary chalcogenides;
机译:二元碱金属硫族化物中本征半金属性的从头算预测:KX(X = S,Se和Te)
机译:新的2D磁性晶体的第一原理调查:铁磁排序和固有半金属性
机译:高居里温度和二维CR3x4中的内在铁磁半金属化(X = S,SE,TE)NanosheTSF
机译:通过低温测量检查自旋转移磁化开关的固有临界电流
机译:跨反铁磁到铁磁过渡的磁化方向的电场控制
机译:含有1 sb2se2 2 1d链的三元硫属化合物Gesb2se3和Ge3sb4se7和与snse有关的2d结构
机译:用于测量内在磁化现象的微处理器控制的高场仪器