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首页> 外文期刊>Advanced Functional Materials >Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability
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Fabrication of a Cu-Cone-Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

机译：铜锥形阳离子源插入导电桥随机存取存储器的制造及其改善的开关可靠性

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摘要

Conductive bridge random access memory (CBRAM) has been regarded as a promising candidate for the next-generation nonvolatile memory technology. Even with the great performance of CBRAM, the global generation and overinjection of cations after much repetitive switching cannot be prevented. The overinjection of cations into an electrolyte layer causes high-resistance-state resistance (R-HRS) degradation, on/off ratio reduction, and eventual switching failure. It also degrades the switching uniformity. In this work, a Cu-cone-structure-embedded TiN/TiO2/Cu cone/TiN device is fabricated to alleviate the problems of Cu-based CBRAM, mentioned above. The fabrication method of the device, which is useful for laboratory scale experiment, is developed, and its superior switching performance and reliability compared with the conventional planar device. The insertion of the Cu cone structure allows the placement of only a limited amount of cation source in each cell, and the embedded conical structure also concentrates the applied electric field, which enables filament growth control. Furthermore, the concentrated field localizes the resistive switching on the tip area of the cone structure, which makes the effective switching area about tens of nanometers even for the much larger area of the entire electrode (several mu m(2)).
机译：导电桥随机存取存储器（CBRAM）被认为是下一代非易失性存储技术的有希望的候选者。即使具有出色的CBRAM性能，也无法防止在多次重复切换后产生全局阳离子和过度注入阳离子。将阳离子过度注入电解质层会导致高电阻状态电阻（R-HRS）退化，导通/截止比降低，并最终导致开关故障。这也降低了开关均匀性。在这项工作中，制造一种嵌入铜锥结构的TiN / TiO2 / Cu锥/ TiN器件可缓解上述基于铜的CBRAM的问题。提出了一种可用于实验室规模实验的装置的制造方法，并且与传统的平面装置相比，其具有优越的开关性能和可靠性。铜锥结构的插入允许在每个单元中仅放置有限量的阳离子源，并且嵌入式锥形结构还集中了所施加的电场，从而可以控制细丝的生长。此外，集中场将电阻切换集中在锥形结构的尖端区域，这使得有效切换区域即使对于整个电极的更大面积（几μm（2））也大约为数十纳米。

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  • 来源
    《Advanced Functional Materials》 |2019年第8期|1806278.1-1806278.13|共13页
  • 作者

    Kim Hae Jin; Park Tae Hyung; Yoon Kyung Jean; Seong Won Mo; Jeon Jeong Woo; Kwon Young Jae; Kim Yumin; Kwon Dae Eun; Kim Gil Seop; Ha Tae Jung; Kim Soo Gil; Yoon Jung Ho; Hwang Cheol Seong;

  • 作者单位

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    SK Hynix Inc, 2091 Gyeongchung Daero, Icheon Si 467734, Gyeonggi Do, South Korea;

    SK Hynix Inc, 2091 Gyeongchung Daero, Icheon Si 467734, Gyeonggi Do, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

    Seoul Natl Univ, Dept Mat Sci & Engn, Gwanak Ro 1, Seoul 151744, South Korea|Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Ro 1, Seoul 151744, South Korea;

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  • 关键词

    cone-structured cation source; electrochemical metallizations; random access memories; field concentration effect; resistive switching memories; scalability effect;

    机译：锥形结构阳离子源;电化学金属化;随机存取存储器;场集中效应;电阻切换存储器;可扩展性效应;

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