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A General Approach to Probe Dynamic Operation and Carrier Mobility in Field-Effect Transistors with Nonuniform Accumulation

机译：累积不均匀的场效应晶体管动态工作和载流子迁移的一般方法

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摘要

Revealing the intrinsic electrical properties is the basis of understanding new functional materials and developing their applications. However, in nonideal field-effect transistors (FETs), conventional current-voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, a generalized gated four-probe (G-GFP) technique is developed, which detects dynamic changes in carrier accumulation and transport. The technique is suitable for exploring the intrinsic properties of semiconductors in FETs with arbitrary contacts and in any operational regimes above the threshold. Application to simulated transistors confirms its accuracy in probing the evolution of channel potential, drift field, and gate-dependent carrier mobility for devices with a contact-limited operation and disordered semiconductors. Comparative experiments are performed based on FETs with various materials, device structures, and operational temperatures. The G-GFP technique proves to exclude the various injection properties, to detect in situ how carriers are accumulated, and to clarify carrier mobility of the semiconductors. In particular, the well-known "double-slope" features in the current-voltage relations are controllably generated and their origins are identified. The approach could be used to explore electronic properties of newly developed materials such as organic, oxide, or 2D semiconductors.
机译：揭示内在的电性能是了解新功能材料并开发其应用的基础。但是，在非理想的场效应晶体管（FET）中，常规的电流-电压特性不能准确地探测电荷传输，特别是对于新开发的半导体。在这里，开发了一种通用的门控四探针（G-GFP）技术，该技术可检测载流子积累和传输中的动态变化。该技术适用于探索具有任意触点的FET中以及阈值以上的任何工作方式中的半导体的固有特性。在模拟晶体管中的应用证实了其在探测具有接触受限操作和无序半导体的器件的沟道电势，漂移场和取决于栅极的载流子迁移率方面的准确性。基于具有各种材料，器件结构和工作温度的FET进行比较实验。事实证明，G-GFP技术排除了各种注入特性，可原位检测载流子如何积累，并阐明半导体的载流子迁移率。特别地，可控制地生成电流-电压关系中的众所周知的“双斜率”特征，并识别其起源。该方法可用于探索诸如有机，氧化物或2D半导体等新开发材料的电子特性。

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  • 来源
    《Advanced Functional Materials》 |2019年第29期|1901700.1-1901700.10|共10页
  • 作者

    Liu Chuan; Chen Changdong; Li Xiaojie; Hu Sujuan; Liu Chenning; Huang Kairong; Dai Fuhua; Zhang Baijun; Liu Xuying; Minari Takeo; Noh Yong-Young; Chen Jun;

  • 作者单位

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Zhengzhou Univ, Sch Mat Sci & Engn, 100 Kexue Ave, Zhengzhou, Henan, Peoples R China;

    NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan;

    Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, 77 Cheongam Ro, Pohang 37673, South Korea;

    Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Opto Elect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    field-effect transistor; nonideal characteristics; semiconductor; transport properties;

    机译：场效应晶体管非理想特性半导体传输特性;

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