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Sulfur-Mastery: Precise Synthesis of 2D Transition Metal Dichalcogenides

机译：掌握硫：精确合成二维过渡金属二硫属元素化物

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摘要

Chemical vapor deposition (CVD) has been developed as the most promising method for the growth of transition metal dichalcogenides (TMDs). In this work, the key factor determining the growth of TMDs is ascertained. A straightforward method is devised to directly achieve a holistic control of thickness, shape, and size of WS2 flakes via a single parameter control, namely, the status of the S-precursor. The thickness-dependent growth of WS2 flakes from mono- to quad-layers is achieved by precise control of the feeding rate of elemental S-precursor. Moreover, the explicit control over amount and exposure time of S-precursor determines the most optimum combination of these parameters to tune the shape of the crystals from triangular to hexagonal with appropriate size. Hence, the experimental findings provide a promising strategy to engineer the growth evolution of WS2 atomic layers by fine tuning of the sulfur supply, paving a pathway to scalable electronic and photonic devices.
机译：化学气相沉积（CVD）已被开发为过渡金属二卤化物（TMD）生长的最有前途的方法。在这项工作中，确定了决定TMD生长的关键因素。设计了一种简单的方法来通过单个参数控制（即S前体的状态）直接实现WS2薄片的厚度，形状和大小的整体控制。 WS2薄片从单层到四层的厚度依赖性生长是通过精确控制元素S前体的进料速率来实现的。此外，对S前体的量和曝光时间的明确控制决定了这些参数的最佳组合，以将晶体的形状从三角形调整为具有适当大小的六边形。因此，实验结果提供了一种通过微调硫的供应量来设计WS2原子层的生长演变的有前途的策略，从而为可扩展的电子和光子设备铺平了道路。

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  • 来源
    《Advanced Functional Materials》 |2019年第27期|1809261.1-1809261.8|共8页
  • 作者

    Zafar Amino; Zafar Zainab; Zhao Weiwei; Jiang Jie; Zhang Yan; Chen Yunfei; Lu Junpeng; Ni Zhenhua;

  • 作者单位

    Southeast Univ, Dept Phys, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China|Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Ordered Matter Sci Res Ctr, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Mech Engn, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Phys, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China|Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Mech Engn, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Mech Engn, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Phys, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China|Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China;

    Southeast Univ, Dept Phys, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China|Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 211189, Jiangsu, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    chemical vapor deposition; layer number; photodetection; shape evolution; transition metal dichalcogenides;

    机译：化学气相沉积;层数;光检测;形状演变;过渡金属二卤化物;

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