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首页> 外文期刊>Advanced Functional Materials >Transient Negative Capacitance Effect in Atomic-Layer- Deposited Al_2O_3/Hf_(0.3)Zr_(0.7)O_2 Bilayer Thin Film
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Transient Negative Capacitance Effect in Atomic-Layer- Deposited Al_2O_3/Hf_(0.3)Zr_(0.7)O_2 Bilayer Thin Film

机译：原子层沉积Al_2O_3 / Hf_（0.3）Zr_（0.7）O_2双层薄膜的瞬态负电容效应

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摘要

The negative capacitance (NC) effect is now attracting a great deal of attention in work towards low-power operation of field effect transistors and extremely large capacitance density in dynamic random access memory. However, to date, observation of the NC effect in dielectric/ferroelectric bilayer capacitors has been limited to the use of epitaxial ferroelectric thin films based on perovskite crystal structures, such as Pb(Zr,Ti)O-3 and BaTiO3, which is not compatible with current complementary metal oxide semiconductor technology. This work, therefore, reports on the transient NC effect in amorphous-Al2O3/polycrystalline-Hf0.3Zr0.7O2 bilayer systems prepared using atomic layer deposition. The thin film processing conditions are carefully tuned to achieve the appropriate ferroelectric performances that are a prerequisite for the examination of the transient NC effect. Capacitance enhancement is observed in a wide voltage range in 5-10 nm thick Al2O3/Hf0.3Zr0.7O2 bilayer thin films. It is found that the capacitance of the dielectric layer plays a critical role in the determination of additional charge density induced by the NC effect. In addition, inhibition of the leakage current is important for stabilization of nonhysteretic charge-discharge behavior of the bilayers. The mean-field approximation combined with classical Landau formalism precisely reproduces the experimental results.
机译：现在，负电容（NC）效应在场效应晶体管的低功耗操作以及动态随机存取存储器中的极大电容密度方面引起了极大的关注。然而，迄今为止，在介电/铁电双层电容器中对NC效应的观察仅限于使用基于钙钛矿晶体结构的外延铁电薄膜，例如Pb（Zr，Ti）O-3和BaTiO3，而并非如此。与当前的互补金属氧化物半导体技术兼容。因此，这项工作报告了使用原子层沉积制备的非晶态Al2O3 /多晶Hf0.3Zr0.7O2双层系统中的瞬态NC效应。仔细调整薄膜处理条件，以实现适当的铁电性能，这是检查瞬态NC效果的前提。在5-10 nm厚的Al2O3 / Hf0.3Zr0.7O2双层薄膜的宽电压范围内均观察到电容增强。已经发现，介电层的电容在确定由NC效应引起的附加电荷密度中起关键作用。另外，抑制漏电流对于稳定双层的非迟滞充放电行为很重要。平均场近似与经典的Landau形式主义相结合，精确地再现了实验结果。

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  • 来源
    《Advanced Functional Materials》 |2019年第17期|1808228.1-1808228.9|共9页
  • 作者

    Kim Keum Do; Kim Yu Jin; Park Min Hyuk; Park Hyeon Woo; Kwon Young Jae; Lee Yong Bin; Kim Han Joon; Moon Taehwan; Lee Young Hwan; Hyun Seung Dam; Kim Baek Su; Hwang Cheol Seong;

  • 作者单位

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Pusan Natl Univ, Dept Mat Sci & Engn, Busan 46241, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

    Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 151744, South Korea|Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 151744, South Korea;

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  • 正文语种 eng
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  • 关键词

    ferroelectrics; hafnium oxide; memory application; negative capacitance;

    机译：铁电体;氧化f;存储器应用;负电容;

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