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Electrical Conduction at the Interface between Insulating van der Waals Materials

机译：范德华绝缘材料之间的界面处的导电

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摘要

Emergent properties of 2D materials attract considerable interest in condensed matter physics and materials science due to their distinguished features that are missing in their bulk counterparts. A mainstream in this research field is to broaden the scope of material to expand the horizons of the research area, while developing functional interfaces between different 2D materials is another indispensable research direction. Here, the emergence of electrical conduction at the interface between insulating 2D materials is demonstrated. A new class of van der Waals heterostructures consisting of two sets of insulating transition-metal dichalcogenides, group-VI WSe2 and group-IV TMSe2 (TM = Zr, Hf), is developed via molecular-beam epitaxy, and it is found that those heterostructures are highly conducting although all the constituent materials are highly insulating. The WSe2/ZrSe2 interface exhibits more conducting behavior than the WSe2/HfSe2 interface, which can be understood by considering the band alignments between constituent materials. Moreover, by increasing Se flux during heterostructure fabrication, the WSe2/ZrSe2 interface becomes more conducting, reaching nearly metallic behavior. Further improvement of the crystalline quality as well as exploring different material combinations are expected to lead to metallic conduction, providing a novel functionality emerging at van der Waals heterostructures.
机译：二维材料的新兴特性因其独特的特征而在大型本体中缺少，因此对凝聚态物理和材料科学引起了极大的兴趣。该研究领域的主流是拓宽材料范围，扩大研究范围，而开发不同2D材料之间的功能接口是另一个必不可少的研究方向。在此，说明了在绝缘2D材料之间的界面处出现了导电。通过分子束外延发展了由两类绝缘过渡金属二硫族化合物组成的新型范德华异质结构，分别是第VI WSe2组和第IV IVTMSe2组（TM = Zr，Hf）。尽管所有构成材料都是高度绝缘的，但异质结构却具有很高的导电性。 WSe2 / ZrSe2界面比WSe2 / HfSe2界面表现出更多的导电性能，这可以通过考虑组成材料之间的能带排列来理解。此外，通过在异质结构制造过程中增加Se的通量，WSe2 / ZrSe2界面变得更具导电性，几乎达到金属性能。晶体质量的进一步提高以及探索不同材料的组合有望导致金属导电，从而在范德华力异质结构上提供了一种新颖的功能。

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  • 来源
    《Advanced Functional Materials》 |2019年第17期|1900354.1-1900354.6|共6页
  • 作者

    Kashiwabara Yuta; Nakano Masaki; Nakagawa Yuji; Wang Yue; Matsuoka Hideki; Iwasa Yoshihiro;

  • 作者单位

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan;

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|RIKEN, CEMS, 2-1 Hirosawa, Wako, Saitama 3510198, Japan;

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan;

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan;

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan;

    Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan|RIKEN, CEMS, 2-1 Hirosawa, Wako, Saitama 3510198, Japan;

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  • 关键词

    2D materials; interface charge transfer; molecular-beam epitaxy; transition-metal dichalcogenide; van der Waals heterostructures;

    机译：二维材料;界面电荷转移;分子束外延;过渡金属二硫属元素;范德华力异质结构;

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