机译:零泊松比状态的相干应变单斜[111] PbTiO_3薄膜
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China|Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China;
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China;
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China;
Shenzhen Univ, Sch Mat Sci & Engn, Shenzhen 518060, Peoples R China;
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA|South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China;
Harbin Inst Technol, Sch Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China;
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore;
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore;
111 perovskite film; ferroelectric; monoclinic; Poisson's ratio; strain engineering;
机译:应变引起的PbTiO_3电场诱导的单斜晶和三斜晶结构的极化旋转和压电性
机译:通过光学二次谐波探测应变铋铁氧体薄膜中的四方/菱面体混合单斜晶相
机译:通过光学二次谐波探测应变铋铁氧体薄膜中的四方/菱面体混合单斜晶相
机译:双轴应变GaSb(111)薄膜的电导率
机译:在铂(111)上清晰定义的超薄钯膜:电化学制备和界面化学。
机译:具有零泊松比的三维聚合物脚手架材料
机译:通过光反射光谱法和高分辨率x-射线研究了在(100),(511),(411),(311)和(111)GaAs衬底上生长的应变(In,Ga)(As,N)薄膜中的氮掺入射线衍射