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首页> 外文期刊>Advanced Functional Materials >Over 30% External Quantum Efficiency Light-Emitting Diodes by Engineering Quantum Dot-Assisted Energy Level Match for Hole Transport Layer
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Over 30% External Quantum Efficiency Light-Emitting Diodes by Engineering Quantum Dot-Assisted Energy Level Match for Hole Transport Layer

机译：通过工程量子点辅助能级匹配为空穴传输层提供超过30％的外部量子效率发光二极管

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摘要

In the study of hybrid quantum dot light-emitting diodes (QLEDs), even for state-of-the-art achievement, there still exists a long-standing charge balance problem, i.e., sufficient electron injection versus inefficient hole injection due to the large valence band offset of quantum dots (QDs) with respect to the adjacent carrier transport layer. Here the dedicated design and synthesis of high luminescence Zn1-xCdxSe/ZnSe/ZnS QDs is reported by precisely controlled shell growth, which have matched energy level with the adjacent hole transport layer in QLEDs. As emitters, such Zn1-xCdxSe- based QLEDs exhibit peak external quantum efficiencies (EQE) of up to 30.9%, maximum brightness of over 334 000 cd m(-2), very low efficiency roll-off at high current density (EQE approximate to 25% @ current density of 150 mA cm(-2)), and operational lifetime extended to approximate to 1 800 000 h at 100 cd m(-2). These extraordinary performances make this work the best among all solution-processed QLEDs reported in literature so far by achieving simultaneously high luminescence and balanced charge injection. These major advances are attributed to the combination of an intermediate ZnSe layer with an ultrathin ZnS outer layer as the shell materials and surface modification with 2-ethylhexane-1-thiol, which can dramatically improve hole injection efficiency and thus lead to more balanced charge injection.
机译：在混合量子点发光二极管（QLED）的研究中，即使取得了最先进的成就，仍然存在着长期存在的电荷平衡问题，即，由于电子注入量大而电子注入效率低而空穴注入效率低量子点（QD）相对于相邻载流子传输层的价带偏移。在此，通过精确控制壳的生长来报告高发光Zn1-xCdxSe / ZnSe / ZnS QD的专用设计和合成，该壳的能量水平与QLED中的相邻空穴传输层相匹配。作为发射器，此类基于Zn1-xCdxSe的QLED表现出高达30.9％的峰值外部量子效率（EQE），最大亮度超过334 000 cd m（-2），在高电流密度下的极低效率滚降（EQE约为至电流密度为150 mA cm（-2）的25％时，工作寿命在100 cd m（-2）时延长到大约1800万小时。通过同时实现高发光和平衡电荷注入，迄今为止，这些非凡的性能使这项工作在所有文献中报道的所有溶液处理QLED中都是最好的。这些主要进展归因于中间ZnSe层与超薄ZnS外层作为壳材料的结合以及用2-乙基己烷-1-硫醇进行的表面改性，这可以显着提高空穴注入效率，从而导致更均衡的电荷注入。

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  • 来源
    《Advanced Functional Materials》 |2019年第33期|1808377.1-1808377.9|共9页
  • 作者

    Song Jiaojiao; Wang Ouyang; Shen Huaibin; Lin Qingli; Li Zhaohan; Wang Lei; Zhang Xintong; Li Lin Song;

  • 作者单位

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

    Northeast Normal Univ, Key Lab UV Emitting Mat & Technol, Minist Educ, Changchun 130024, Jilin, Peoples R China;

    Northeast Normal Univ, Key Lab UV Emitting Mat & Technol, Minist Educ, Changchun 130024, Jilin, Peoples R China;

    Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    charge balance; efficiency; light-emitting diodes; quantum dots; surface ligands;

    机译：充电平衡;效率;发光二极管;量子点;表面配体;

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