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A Facile Method for the Growth of Organic Semiconductor Single Crystal Arrays on Polymer Dielectric toward Flexible Field-Effect Transistors

机译：在聚合物电介质上向柔性场效应晶体管生长有机半导体单晶阵列的简便方法

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Polymer dielectrics with intrinsic mechanical flexibility are considered as a key component for flexible organic field-effect transistors (OFETs). However, it remains a challenge to fabricate highly aligned organic semiconductor single crystal (OSSC) arrays on the polymer dielectrics. Herein, for the first time, a facile and universal strategy, polar surface-confined crystallization (PSCC), is proposed to grow highly aligned OSSC arrays on poly(4-vinylphenol) (PVP) dielectric layer. The surface polarity of PVP is altered periodically with oxygen-plasma treatment, enabling the preferential nucleation of organic crystals on the strong-polarity regions. Moreover, a geometrical confinement effect of the patterned regions can also prevent multiple nucleation and misaligned molecular packing, enabling the highly aligned growth of OSSC arrays with uniform morphology and unitary crystallographic orientation. Using 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) as an example, highly aligned C8-BTBT single crystal arrays with uniform molecular packing and crystal orientation are successfully fabricated on the PVP layer, which can guarantee their uniform electrical properties. OFETs made from the C8-BTBT single crystal arrays on flexible substrates exhibit a mobility as high as 2.25 cm(2) V-1 s(-1), which has surpassed the C8-BTBT polycrystalline film-based flexible devices. This work paves the way toward the fabrication of highly aligned OSSCs on polymer dielectrics for high-performance, flexible organic devices.
机译：具有固有机械柔韧性的聚合物电介质被认为是柔韧性有机场效应晶体管（OFET）的关键组件。但是，在聚合物电介质上制造高度取向的有机半导体单晶（OSSC）阵列仍然是一个挑战。本文中，首次提出了一种简便且通用的策略，即极性表面受限结晶（PSCC），以在聚（4-乙烯基苯酚）（PVP）电介质层上生长高度对齐的OSSC阵列。 PVP的表面极性通过氧等离子体处理定期更改，从而使强极性区域中的有机晶体优先成核。此外，图案区域的几何限制作用还可以防止多重成核和未排列的分子堆积，从而能够以均匀的形态和单一的晶体学取向高度生长OSSC阵列。以2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩（C8-BTBT）为例，成功地在PVP层上制备了具有均匀分子堆积和晶体取向的高取向C8-BTBT单晶阵列，可以保证其均匀的电性能。由柔性基板上的C8-BTBT单晶阵列制成的OFET表现出高达2.25 cm（2）V-1 s（-1）的迁移率，已经超过了基于C8-BTBT多晶膜的柔性器件。这项工作为在高性能，柔性有机器件的聚合物电介质上制造高度对准的OSSC铺平了道路。

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