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Dynamically Modulated GaN Whispering Gallery Lasing Mode for Strain Sensor

机译：用于应变传感器的动态调制GaN耳语画廊激光发射模式

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摘要

The continuous development of strain sensors offers significant opportunities for improving human-machine interfaces and health monitoring. The dynamically modulated lasing mode is a novel approach to realize a flexible, noncontact, high color-resolvability, high-resolution, and ultrasensitive strain sensor. Here, a flexible strain sensor perceiving stress variations is reported via the dynamical regulation of a GaN whispering gallery lasing mode based on the piezoelectric effect. The refraction index of GaN shows a linear relationship with the applied external tensile strain, resulting in a redshift phenomenon of the lasing mode peak at room temperature due to the predominant function of the piezoelectric polarization in the GaN microwire. Compared with a strain sensor relying on the wavelength shift of a photoluminescence (PL) emission peak, the differences and advantages of a sensor based on the strain-induced lasing mode variation are also investigated and analyzed systematically. This strain sensor may serve as an essential step toward the color mapping of mechanical signals by optical methods, with potential applications in color-perceived touching sensing, noncontact stress measurement, laser modulation, and optical communication technologies.
机译：应变传感器的不断发展为改善人机界面和健康监测提供了重大机遇。动态调制的激光发射模式是一种新颖的方法，可实现灵活的，非接触式的，高颜色分辨率，高分辨率和超灵敏的应变传感器。在此，通过基于压电效应的GaN细语通道激光模式的动态调节，报告了感知应力变化的柔性应变传感器。 GaN的折射率与施加的外部拉伸应变呈线性关系，由于GaN微线中压电极化的主要作用，导致室温下的激射模峰出现红移现象。与依赖于光致发光（PL）发射峰的波长偏移的应变传感器相比，还对基于应变引起的激光模式变化的传感器的区别和优势进行了系统地研究和分析。这种应变传感器可以作为通过光学方法对机械信号进行颜色映射的必不可少的步骤，并可能在颜色感知的触摸感应，非接触应力测量，激光调制和光通信技术中得到应用。

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  • 来源
    《Advanced Functional Materials》 |2019年第42期|1905051.1-1905051.8|共8页
  • 作者

    Peng Yiyao; Lu Junfeng; Peng Dengfeng; Ma Wenda; Li Fangtao; Chen Qiushuo; Wang Xiandi; Sun Junlu; Liu Haitao; Pan Caofeng;

  • 作者单位

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China|Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China;

    Shenzhen Univ Coll Optoelect Engn Shenzhen 518060 Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China|Zhengzhou Univ Dept Phys Zhengzhou 450001 Henan Peoples R China|Zhengzhou Univ Lab Mat Phys Zhengzhou 450001 Henan Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst Beijing 100083 Peoples R China|Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China|Shenzhen Univ Coll Optoelect Engn Shenzhen 518060 Peoples R China|Guangxi Univ Ctr Nanoenergy Res Sch Phys Sci & Technol Nanning 530004 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    GaN microwires; lasing mode; piezoelectric effect; strain sensors; whispering gallery mode;

    机译：GaN微线;激光模式压电效应应变传感器耳语画廊模式;

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