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Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

机译：约束铁电纳米岛中的导电畴壁的操纵

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摘要

Conductive ferroelectric domain walls-ultranarrow configurable conduction paths-have been considered as essential building blocks for future programmable domain wall electronics. For applications in high-density devices, it is imperative to explore the conductive domain walls in small confined systems, while earlier investigations have hitherto focused on thin films or bulk single. Here, an observation and manipulation of conductive domain walls confined within small BiFeO3 nanoislands aligned in high-density arrays are demonstrated. Using conductive atomic force microscopy, various types of conductive domain walls, including the head-to-head charged domain walls (CDWs), zigzag domain walls, and typical 71 degrees head-to-tail neutral domain walls (NDWs), are distinctly visualized. The CDWs exhibit remarkably enhanced metallic conductivity with current of approximate to nA order in magnitude and 10(4) times larger than that inside domains (0.01-0.1 pA), while the semiconducting NDWs allow much smaller current (approximate to 10 pA) than the CDWs. The substantial difference in conductivity for dissimilar walls enables manipulations of various wall conduction states for individual addressable nanoislands via electrical tuning of domain structures. A controllable writing of four distinctive states in individual nanoislands can be achieved, showing application potentials for developing multilevel high-density memories.
机译：导电铁电畴壁-超窄可配置的传导路径-已被认为是未来可编程畴壁电子设备的基本组成部分。对于高密度器件中的应用，当务之急是探索小型密闭系统中的导电畴壁，而迄今为止，早期的研究都集中在薄膜或单块体上。在此，我们展示了对以高密度阵列排列的BiFeO3纳米小岛内的导电畴壁的观察和处理。使用导电原子力显微镜，可以清晰地看到各种类型的导电畴壁，包括头对头带电畴壁（CDW），Z字形畴壁和典型的71度头对尾中性畴壁（NDW） 。 CDW表现出显着增强的金属导电性，电流幅度约为nA阶，比内部域（0.01-0.1 pA）大10（4）倍，而半导体NDW所允许的电流小得多（大约10 pA）。 CDW。不同壁的电导率的实质差异使得可以通过域结构的电调谐来控制各个可寻址纳米岛的各种壁电导状态。可以实现对单个纳米岛中四个不同状态的可控写入，显示了开发多层高密度存储器的应用潜力。

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