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High Areal Capacitance of N-Doped Graphene Synthesized by Arc Discharge

机译：电弧放电合成高掺杂N掺杂石墨烯的区域电容

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The lack of cost effective, industrial-scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N-doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N-doped graphene (1-1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (approximate to 3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N-doped graphene material exhibits a remarkable area normalized capacitance of 63 mu F cm(-2). The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N-doped graphene flakes produced by arc discharge in graphene-based supercapacitors, along with well-studied active exfoliated graphene and reduced graphene oxide.
机译：缺乏成本有效的工业规模生产方法阻碍了石墨烯材料的广泛应用。尽管电弧放电可用于石墨烯薄片的批量生产中，但由于其不能控制合成和杂原子掺杂，因此电弧放电并未引起人们的广泛关注。在这项研究中，提出了一种利用阳极碳填料通过电弧放电提高N掺杂石墨烯合成中掺杂效率的简便方法。与根据先前文献通过电弧工艺合成的N掺杂石墨烯（1-1.5％N）相比，所得石墨烯薄片显示出显着增加的掺杂水平（约3.5％N），并且石墨N富集程度非常低。通过常规工艺可实现，同时保持较高的涡轮层结晶度。检查了合成材料的电解质离子存储，其中合成的N掺杂石墨烯材料显示出63μF F cm（-2）的显着面积归一化电容。出乎意料的高面积电容，优于大多数碳材料，这归因于外在拟电容，高结晶度和裸露石墨烯边缘的丰度的协同效应。这些结果凸显了石墨烯基超级电容器中电弧放电产生的N掺杂石墨烯薄片的潜力，以及经过充分研究的活性剥落石墨烯和还原型石墨烯氧化物。

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