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首页> 外文期刊>Advanced Functional Materials >Rear-Passivated Ultrathin Cu(ln,Ca)Se_2 Films by AI_2O_3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency
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Rear-Passivated Ultrathin Cu(ln,Ca)Se_2 Films by AI_2O_3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

机译：AI_2O_3纳米结构的后钝化超薄Cu（ln，Ca）Se_2膜，采用掠射角沉积法提高了光伏器件的效率

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摘要

In this work, for the first time, the addition of aluminum oxide nanostructures (Al2O3 NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se-2 device (400 nm) fabricated using a sequential process, i.e., post-selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al2O3 NSs with improved Se diffusion into the non-uniformed metallic precursor due to the surface roughness resulting from the Al2O3 NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al2O3 NSs. The coverage and thickness of the Al2O3 NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na2SeX and phase separation. The passivation effect attributed to the Al2O3 NSs is well studied using the bias-EQE measurement and J-V characteristics under dark and illuminated conditions. With the optimization of the Al2O3 NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se-2 devices, and providing significant opportunities for further applications.
机译：在这项工作中，这是首次在通过顺序制造的超薄Cu（In，Ga）Se-2器件（400 nm）上研究了通过掠角沉积（GLAD）生长的氧化铝纳米结构（Al2O3 NSs）的添加。工艺，即金属前体层的后硒化。这项研究中最引人注目的观察结果是，由于Al2O3 NSs产生的表面粗糙度，将具有改善的Se扩散的Al2O3 NSs加入到不均匀的金属前驱物中后，相分离的减轻。此外，后表面Na浓度升高可归因于Al2O3 NSs促进的Na离子扩散增加。 Al2O3 NSs的覆盖范围和厚度会显着影响电池性能，因为与Na2SeX的形成和相分离相关的分流电阻会增加。使用bias-EQE测量和在黑暗和光照条件下的J-V特性，可以很好地研究归因于Al2O3 NSs的钝化效果。随着Al2O3 NSs的优化，电池性能显着提高，功率转换效率从2.83％提高到5.33％，证明了一种改进超薄Cu（In，Ga）Se-2器件的有前途的方法，并提供了进一步应用的重大机会。

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