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首页> 外文期刊>Advanced Functional Materials >Solution-Processed Silicane Field-Effect Transistor: Operation Due to Stacking Defects on the Channel
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Solution-Processed Silicane Field-Effect Transistor: Operation Due to Stacking Defects on the Channel

机译：溶液处理的硅场效应晶体管：由于通道上的堆叠缺陷而导致的操作

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摘要

2D silicon nanomaterials have unique potential for use in applications owing to their many different exotic electronic properties. Field-effect transistors are fabricated based on free-standing silicanes through a solution process. Owing to the sensitive surface and the nanometer thickness, the devices require the use of fabrication conditions similar to those of lithium-ion batteries to prevent oxidation of the sheets. Reliable transistor performance is observed at room temperature in a channel thinner than 3 nm, as drain voltage dependent transfer curves current modulation, depending on the edge effect of the silicane, although the transistor property is modest (hole mobility of 1.8 cm(2) V-1 s(-1)). The results suggest the feasibility of other air-sensitive 2D nanomaterials for applications in nanoelectronic devices.
机译：二维硅纳米材料由于其许多不同的奇异电子特性而具有在应用中的独特潜力。场效应晶体管是通过溶液法基于独立式硅酮制造的。由于敏感表面和纳米厚度，该装置需要使用类似于锂离子电池的制造条件，以防止薄片氧化。室温下，在小于3 nm的通道中观察到可靠的晶体管性能，因为取决于漏极电压的传输曲线电流调制取决于硅酮的边缘效应，尽管晶体管的特性适中（空穴迁移率为1.8 cm（2）V -1 s（-1））。结果表明其他对空气敏感的2D纳米材料在纳米电子设备中应用的可行性。

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