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Double-Sided Surface Passivation of 3D Perovskite Film for High-Efficiency Mixed-Dimensional Perovskite Solar Cells

机译:用于高效混合尺寸钙钛矿太阳能电池的3D钙钛矿薄膜的双面表面钝化

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摘要

Defect-mediated carrier recombination at the interfaces between perovskite and neighboring charge transport layers limits the efficiency of most state-of-the-art perovskite solar cells. Passivation of interfacial defects is thus essential for attaining cell efficiencies close to the theoretical limit. In this work, a novel double-sided passivation of 3D perovskite films is demonstrated with thin surface layers of bulky organic cation-based halide compound forming 2D layered perovskite. Highly efficient (22.77%) mixed-dimensional perovskite devices with a remarkable open-circuit voltage of 1.2 V are reported for a perovskite film having an optical bandgap of approximate to 1.6 eV. Using a combination of experimental and numerical analyses, it is shown that the double-sided surface layers provide effective defect passivation at both the electron and hole transport layer interfaces, suppressing surface recombination on both sides of the active layer. Despite the semi-insulating nature of the passivation layers, an increase in the fill factor of optimized cells is observed. The efficient carrier extraction is explained by incomplete surface coverage of the 2D perovskite layer, allowing charge transport through localized unpassivated regions, similar to tunnel-oxide passivation layers used in silicon photovoltaics. Optimization of the defect passivation properties of these films has the potential to further increase cell efficiencies.
机译:钙钛矿与相邻电荷传输层之间界面处的缺陷介导的载流子重组限制了大多数最新钙钛矿太阳能电池的效率。因此,界面缺陷的钝化对于获得接近理论极限的电池效率至关重要。在这项工作中,演示了一种新颖的3D钙钛矿薄膜的双面钝化工艺,其具有形成2D层状钙钛矿的庞大有机阳离子基卤化物的薄表面层。对于具有约1.6eV的光学带隙的钙钛矿膜,据报道具有1.2V的显着开路电压的高效(22.77%)混合尺寸的钙钛矿器件。使用实验和数值分析的组合,表明双面表面层在电子和空穴传输层的界面上均提供了有效的缺陷钝化,从而抑制了活性层两侧的表面复合。尽管钝化层具有半绝缘性质,但仍观察到优化单元的填充因子增加。二维钙钛矿层的表面覆盖不完全可以解释有效的载流子提取,类似于硅光伏中使用的隧道氧化物钝化层,电荷可以通过局部未钝化区域传输。这些膜的缺陷钝化性能的优化具有进一步提高电池效率的潜力。

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