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首页> 外文期刊>Advanced Functional Materials >High-Performance On-Chip Thermionic Electron Micro-Emitter Arrays Based on Super-Aligned Carbon Nanotube Films
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High-Performance On-Chip Thermionic Electron Micro-Emitter Arrays Based on Super-Aligned Carbon Nanotube Films

机译：基于超取向碳纳米管薄膜的高性能片上热电子微发射器阵列

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摘要

An important advancement towards the realization of miniaturized and fully integrated vacuum electronic devices will be the development of on-chip integrated electron sources with stable and reproducible performances. Here, the fabrication of high-performance on-chip thermionic electron micro-emitter arrays is demonstrated by exploiting suspended super-aligned carbon nanotube films as thermionic filaments. For single micro-emitter, an electron emission current up to approximate to 20 mu A and density as high as approximate to 1.33 A cm(-2) are obtained at a low-driven voltage of 3.9 V. The turn-on/off time of a single micro-emitter is measured to be less than 1 mu s. Particularly, stable (+/- 1.2% emission current fluctuation for 30 min) and reproducible (+/- 0.2% driven voltage variation over 27 cycles) electron emission have been experimentally observed under a low vacuum of approximate to 5 x 10(-4) Pa. Even under a rough vacuum of approximate to 10(-1) Pa, an impressive reproducibility (+/- 2% driven voltage variation over 20 cycles) is obtained. Moreover, emission performances of micro-emitter arrays are found to exhibit good uniformity. The outstanding stability, reproducibility, and uniformity of the thermionic electron micro-emitter arrays imply their promising applications as on-chip integrated electron sources.
机译：实现小型化和完全集成的真空电子设备的重要进展将是开发具有稳定和可复制性能的片上集成电子源。在这里，通过利用悬浮的超取向碳纳米管薄膜作为热电子丝来证明高性能芯片上热电子微发射体阵列的制造。对于单个微型发射极，在3.9 V的低驱动电压下可获得高达约20μA的电子发射电流和高达1.33 A cm（-2）的密度。开启/关闭时间测量的单个微发射极的“ A”小于1μs。特别是，在大约5 x 10（-4）的低真空下，通过实验观察到稳定的（30分钟内的发射电流波动为+/- 1.2％）和可再现的（27个周期内+/- 0.2％的驱动电压变化）的电子发射。 ）Pa。即使在大约10（-1）Pa的粗真空下，也可获得令人印象深刻的重现性（20个周期内+/- 2％的驱动电压变化）。此外，发现微发射器阵列的发射性能表现出良好的均匀性。热电子微发射器阵列出色的稳定性，可重复性和均匀性暗示了它们作为片上集成电子源的有希望的应用。

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