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Photoassisted Electroforming Method for Reliable Low-Power Organic-Inorganic Perovskite Memristors

机译：可靠的低功率有机-无机钙钛矿忆阻器的光辅助电铸方法

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摘要

Organic-inorganic hybrid perovskite memristors with high resistive-switching (RS) reliability and low power consumption are crucial for high-density storage and high-efficiency neuromorphic computing. However, the current overshoot in the electroforming process generally induces overgrowth of conductive filaments (CFs) and degrades the RS performance. Here, a simple photo-assisted electroforming (PAE) method to suppress the current overshoot, in which the visible light irradiation is introduced into the initial electroforming process, is proposed for the first time. As a result, a reliable memristor with reduced RS fluctuation and enhanced cycling endurance is obtained, and also, the low operating current of 0.06 mA and low powerconsumption of 0.12 mW are achieved, which are about one order of magnitude lower than those of most reported hybrid perovskite-based memristors. Further experimental evidence indicates that light irradiation plays dual roles: 1) the light-induced lowering of iodide migration barrier leads to a significant reduction of overshoot current and forming voltage; 2) the enhanced local photoconductivity of the perovskite film shares the overshoot current through the CFs. Both factors limit the total quantity of vacancy defects generated in the electroforming process, thus preventing undesirable overgrowth of the CFs. The present PAE strategy has promise for developing high-performance memristors.
机译：高电阻开关（RS）可靠性和低功耗的有机-无机混合钙钛矿忆阻器对于高密度存储和高效神经形态计算至关重要。但是，电铸过程中的电流过冲通常会引起导电丝（CF）的过度生长，并降低RS性能。在此，首次提出了一种用于抑制电流过冲的简单光辅助电铸（PAE）方法，其中将可见光辐照引入到初始电铸过程中。结果，获得了具有减小的RS波动和增强的循环耐久性的可靠的忆阻器，并且还实现了0.06 mA的低工作电流和0.12 mW的低功耗，这比大多数报道的低约一个数量级。基于钙钛矿的混合忆阻器。进一步的实验证据表明，光辐射起着双重作用：1）光诱导的碘化物迁移势垒的降低导致过冲电流和形成电压的显着降低; 2）钙钛矿膜增强的局部光电导率共享了通过CF的过冲电流。这两个因素都限制了电铸工艺中产生的空位缺陷的总量，从而防止了CF的不希望的过度生长。当前的PAE策略有望开发出高性能的忆阻器。

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