Transition-Metal Dichalcogenide NiTe_2: An Ambient-Stable Material for Catalysis and Nanoelectronics

Nappini Silvia; Boukhvalov Danil W.; DOlimpio Gianluca; Zhang Libo; Ghosh Barun; Kuo Chia-Nung; Zhu Haoshan; Cheng Jia; Nardone Michele; Ottaviano Luca; Mondal Debashis; Edla Raju; Fuji Jun; Lue Chin Shan; Vobornik Ivana; Yarmoff Jory A.; Agarwal Amit; Wang Lin; Zhang Lixue; Bondino Federica; Politano Antonio

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Transition-Metal Dichalcogenide NiTe_2: An Ambient-Stable Material for Catalysis and Nanoelectronics

机译：过渡金属二硫代甲胺NITE_2：催化和纳米电子材料的环境稳定材料

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By means of theory and experiments, the application capability of nickel ditelluride (NiTe2) transition-metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te surface termination forms a TeO2 skin in an oxygen environment. In ambient atmosphere, passivation is achieved in less than 30 min with the TeO2 skin having a thickness of about 7 angstrom. NiTe2 shows outstanding tolerance to CO exposure and stability in water environment, with subsequent good performance in both hydrogen and oxygen evolution reactions. NiTe2-based devices consistently demonstrate superb ambient stability over a timescale as long as one month. Specifically, NiTe2 has been implemented in a device that exhibits both superior performance and environmental stability at frequencies above 40 GHz, with possible applications as a receiver beyond the cutoff frequency of a nanotransistor.

机译：通过理论和实验，评估亚硝基脲（NITE2）过渡 - 金属二甲基甲基催化和纳米电子学中的施加能力。 TE表面终止在氧环境中形成TEO2皮肤。在环境气氛中，钝化在不到30分钟内实现，厚度约为7埃的TEO2皮肤。 NITE2显示出在水环境中的CO暴露和稳定性的出色耐受性，随后在氢气和氧气进化反应中的良好性能。基于NITE2的设备一直在少许少许一个月的时间展示超级的环境稳定性。具体地，NITE2已经在设备上实现了在40GHz高于40GHz的频率上具有优异性能和环境稳定性的设备中，具有可能的应用作为超出纳米晶体的截止频率的接收器。

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来源
《Advanced Functional Materials》 |2020年第22期|2000915.1-2000915.11|共11页
作者
Nappini Silvia; Boukhvalov Danil W.; DOlimpio Gianluca; Zhang Libo; Ghosh Barun; Kuo Chia-Nung; Zhu Haoshan; Cheng Jia; Nardone Michele; Ottaviano Luca; Mondal Debashis; Edla Raju; Fuji Jun; Lue Chin Shan; Vobornik Ivana; Yarmoff Jory A.; Agarwal Amit; Wang Lin; Zhang Lixue; Bondino Federica; Politano Antonio;
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作者单位

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy;

Nanjing Forestry Univ Coll Sci Inst Mat Phys & Chem Nanjing 210037 Peoples R China|Ural Fed Univ Theoret Phys & Appl Math Dept Mira St 19 Ekaterinburg 620002 Russia;

Univ Aquila Dept Phys & Chem Sci Via Vetoio I-67100 Laquila AQ Italy;

Indian Inst Technol Kanpur Dept Phys Kanpur 208016 Uttar Pradesh India;

Natl Cheng Kung Univ Dept Phys 1 Ta Hsueh Rd Tainan 70101 Taiwan;

Univ Calif Riverside Dept Phys & Astron Riverside CA 92521 USA;

Qingdao Univ Coll Chem & Chem Engn Qingdao 266071 Peoples R China;

Univ Aquila Dept Phys & Chem Sci Via Vetoio I-67100 Laquila AQ Italy;

Univ Aquila Dept Phys & Chem Sci Via Vetoio I-67100 Laquila AQ Italy;

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy|Abdus Salaam Int Ctr Theoret Phys Str Costiera 11 I-34100 Trieste Italy;

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy;

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy;

Natl Cheng Kung Univ Dept Phys 1 Ta Hsueh Rd Tainan 70101 Taiwan;

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy;

Univ Calif Riverside Dept Phys & Astron Riverside CA 92521 USA;

Indian Inst Technol Kanpur Dept Phys Kanpur 208016 Uttar Pradesh India;

Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China;

Chinese Acad Sci State Key Lab Infrared Phys Shanghai Inst Tech Phys 500 Yutian Rd Shanghai 200083 Peoples R China|Qingdao Univ Coll Chem & Chem Engn Qingdao 266071 Peoples R China;

CNR IOM Lab TASC Area Sci Pk SS 14 Km 163-5 I-34149 Trieste Italy;

Univ Aquila Dept Phys & Chem Sci Via Vetoio I-67100 Laquila AQ Italy|CNR IMM 8 Str 5 I-95121 Catania Italy;

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正文语种 eng
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catalysis; density functional theory; nickel ditelluride; surface science; transition-metal dichalcogenides;

机译：催化;密度函数理论;镍Ditellidere;表面科学;过渡金属二硫代芳基;

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Transition-Metal Dichalcogenide NiTe_2: An Ambient-Stable Material for Catalysis and Nanoelectronics

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