首页> 外文期刊>Advanced Functional Materials >Recent Progress in Photonic Processing of Metal-Oxide Transistors
【24h】

Recent Progress in Photonic Processing of Metal-Oxide Transistors

机译:金属氧化物晶体管光子处理的最新进展

获取原文
获取原文并翻译 | 示例
           

摘要

Abstract Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional high‐temperature thermal annealing, offering rapid manufacturing times and compatibility with temperature‐sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal‐oxide thin‐film transistors (TFTs) are presented with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or postdeposition treatment of metal oxides and their application in thin‐film electronics. The pros and cons of the different technologies are discussed in light of recent developments and prospective research in the field of modern large‐area electronics is highlighted.
机译:摘要在过去几十年中,使用各种光源的电子材料的光子处理领域已经取得了重大进展。这些技术现在已经与新兴电子材料一起利用作为传统的高温热退火的替代品,提供快速制造时间和与温度敏感的衬底材料的兼容性等潜在的优点。这里,给出了金属氧化物薄膜晶体管(TFT)的光子处理范例的最新进展,特别强调使用各种光源技术用于前体材料的光化学和热化学转化或金属氧化物的后沉积处理及其应用在薄膜电子器件中。据突出了近期发展和前瞻性研究,讨论了不同技术的优缺点,突出了现代大面积电子领域。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号