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Composition Engineering of All-Inorganic Perovskite Film for Efficient and Operationally Stable Solar Cells

机译：全无机钙钛矿薄膜的组成工程，用于高效和操作稳定的太阳能电池

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摘要

Cesium-based inorganic perovskites have recently attracted great research focus due to their excellent optoelectronic properties and thermal stability. However, the operational instability of all-inorganic perovskites is still a main hindrance for the commercialization. Herein, a facile approach is reported to simultaneously enhance both the efficiency and long-term stability for all-inorganic CsPbI2.5Br0.5 perovskite solar cells via inducing excess lead iodide (PbI2) into the precursors. Comprehensive film and device characterizations are conducted to study the influences of excess PbI2 on the crystal quality, passivation effect, charge dynamics, and photovoltaic performance. It is found that excess PbI2 improves the crystallization process, producing high-quality CsPbI2.5Br0.5 films with enlarged grain sizes, enhanced crystal orientation, and unchanged phase composition. The residual PbI2 at the grain boundaries also provides a passivation effect, which improves the optoelectronic properties and charge collection property in optimized devices, leading to a power conversion efficiency up to 17.1% with a high open-circuit voltage of 1.25 V. More importantly, a remarkable long-term operational stability is also achieved for the optimized CsPbI2.5Br0.5 solar cells, with less than 24% degradation drop at the maximum power point under continuous illumination for 420 h.
机译：基于Cesium的无机钙培最近吸引了由于它们出色的光电性能和热稳定性而巨大的研究重点。然而，全无机佩洛斯克斯的运作不稳定仍然是商业化的主要障碍。在此，据报道，通过将过量的铅碘化物（PBI2）诱导至前体，同时增强全无机CSPBI2.5BR0.5钙钛矿太阳能电池的效率和长期稳定性。进行综合电影和设备表征，以研究过量PBI2对晶体质量，钝化效果，充电动力学和光伏性能的影响。发现过量的PBI2改善了结晶过程，产生具有扩大的晶粒尺寸，增强的晶体取向和未改变的相位成分的高质量Cspbi2.5br0.5薄膜。晶界处的残余PBI2还提供了一种钝化效果，其改善了优化器件中的光电性能和电荷收集性能，导致功率转换效率高达17.1％，具有1.25 V的高开路电压。更重要的是，对于优化的CSPBI2.5BR0.5太阳能电池，还可以实现显着的长期操作稳定性，在连续照射下的最大功率点下降小于24％的降解下降420小时。

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  • 来源
    《Advanced Functional Materials》 |2020年第28期|2001764.1-2001764.10|共10页
  • 作者

    Tian Jingjing; Wang Jing; Xue Qifan; Niu Tianqi; Yan Lei; Zhu Zonglong; Li Ning; Brabec Christoph J.; Yip Hin-Lap; Cao Yong;

  • 作者单位

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China;

    City Univ Hong Kong Dept Chem Kowloon Tat Chee Ave Hong Kong Peoples R China;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China|South China Inst Collaborat Innovat Innovat Ctr Printed Photovolta Dongguan 523808 Peoples R China;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China;

    City Univ Hong Kong Dept Chem Kowloon Tat Chee Ave Hong Kong Peoples R China;

    Friedrich Alexander Univ Erlangen Nurnberg Inst Mat Elect & Energy Technol I MEET Martensstr 7 D-91058 Erlangen Germany|Forschungszentrum Julich Helmholtz Inst Erlangen Nurnberg HI ERN Immerwahrstr 2 D-91058 Erlangen Germany|Zhengzhou Univ Natl Engn Res Ctr Adv Polymer Proc Technol Zhengzhou 450002 Peoples R China;

    Friedrich Alexander Univ Erlangen Nurnberg Inst Mat Elect & Energy Technol I MEET Martensstr 7 D-91058 Erlangen Germany|Forschungszentrum Julich Helmholtz Inst Erlangen Nurnberg HI ERN Immerwahrstr 2 D-91058 Erlangen Germany;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China|South China Inst Collaborat Innovat Innovat Ctr Printed Photovolta Dongguan 523808 Peoples R China;

    South China Univ Technol State Key Lab Luminescent Mat & Devices Inst Polymer Optoelect Mat & Devices Sch Mat Sci & Engn 381 Wushan Rd Guangzhou 510640 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    composition engineering; CsPbI; 2; 5Br; 0; 5; defect passivation; operationally stable; PbI; (2);

    机译：组成工程;cspbi;2;5br;0;5;缺陷钝化;运作稳定;PBI;（2）;

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