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Multifunctional Lateral Transition-Metal Disulfides Heterojunctions

机译：多功能横向过渡 - 金属二硫化物异质结

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摘要

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS(2)heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS(2)heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors. In addition, they all demonstrate a sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate an effective thermally driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS(2)heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.
机译：使用第一原理计算系统地研究了两种类型的横向Vs2 | MOS（2）异质结的固有旋转依赖性传输性能，并且设计了它们的各种纳米型具有新颖性的纳米型。横向VS2 | MOS（2）异质结二极管显示出完美的整流效果，并且很有希望肖特基二极管的应用。观察到型器件的大自旋偏振率，然后实现纯自旋介导电流。栅极电压显着调谐其场效应晶体管的电流和整流比。此外，它们都证明了蓝光的敏感光响应，并且可以用作光电探测器和光伏器件。此外，当在两个端子之间出现温度感应时，它们产生有效的热驱动电流，表明它们是潜在的热电材料。因此，横向Vs2 | MOS（2）异质结显示多功能性质，并在闪铜器，光电子和旋转升降机中具有各种潜在的应用。

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  • 来源
    《Advanced Functional Materials》 |2020年第32期|2002939.1-2002939.9|共9页
  • 作者

    An Yipeng; Hou Yusheng; Wang Kun; Gong Shijing; Ma Chunlan; Zhao Chuanxi; Wang Tianxing; Jiao Zhaoyong; Wang Heyan; Wu Ruqian;

  • 作者单位

    Henan Normal Univ Sch Phys Xinxiang 453007 Henan Peoples R China|Henan Normal Univ Henan Key Lab Boron Chem & Adv Energy Mat Xinxiang 453007 Henan Peoples R China;

    Univ Calif Irvine Dept Phys & Astron Irvine CA 92697 USA;

    Univ Michigan Dept Mech Engn Ann Arbor MI 48109 USA;

    East China Normal Univ Key Lab Polar Mat & Devices MOE Shanghai 200062 Peoples R China|East China Normal Univ Dept Optoelect Shanghai 200062 Peoples R China;

    Suzhou Univ Sci & Technol Sch Math & Phys Suzhou 215009 Jiangsu Peoples R China;

    Jinan Univ Dept Phys Guangdong Prov Engn Technol Res Ctr Vacuum Coatin Siyuan Lab Guangzhou 510632 Peoples R China;

    Henan Normal Univ Sch Phys Xinxiang 453007 Henan Peoples R China|Henan Normal Univ Henan Key Lab Boron Chem & Adv Energy Mat Xinxiang 453007 Henan Peoples R China;

    Henan Normal Univ Sch Phys Xinxiang 453007 Henan Peoples R China|Henan Normal Univ Henan Key Lab Boron Chem & Adv Energy Mat Xinxiang 453007 Henan Peoples R China;

    Henan Normal Univ Sch Phys Xinxiang 453007 Henan Peoples R China|Henan Normal Univ Henan Key Lab Boron Chem & Adv Energy Mat Xinxiang 453007 Henan Peoples R China;

    Univ Calif Irvine Dept Phys & Astron Irvine CA 92697 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    field-effect transistors; lateral heterojunctions; nanodevices; Schottky diodes; transition-metal disulfides;

    机译：场效应晶体管;横向异质结;纳米型;肖特基二极管;过渡金属二硫化物;

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