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Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top-Contact-Structured Organic Transistors

机译：通过在顶接触结构的有机晶体管中自发地产生界面性质的界面性质

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摘要

Controlling the interfacial properties between the electrode and active layer in organic field-effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top-contact-structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top-contacted source/drain electrode and the polymer active layer to improve the contact resistance (R-C). To achieve this goal, a small amount of interface-functionalizing species is blended with the p-type polymer semiconductor and functionalized at the interface region at once through a thermal process. TheR(C)values dramatically decrease after introduction of the interfacial functionalization to 15.9 k omega cm, compared to the 113.4 k omega cm for the pristine case. In addition, the average field-effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm(2)V(-1)s(-1)compared to the pristine case (0.041 cm(2)V(-1)s(-1)), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top-contact OFETs by solving the discomfort of the interface optimization process.
机译：在有机场效应晶体管（OFET）中控制电极和有源层之间的界面性能可以显着影响它们的接触性能，从而改善了装置性能。然而，由于通过曝光溶剂对有机活性层严重损坏，难以施加到顶部接触结构（最有用的器件结构之一）。这里，探讨了用于优化顶部接触源/漏电极和聚合物活性层之间的界面以改善接触电阻（R-C）的自发受控的方法。为了实现这一目标，少量的界面官能化物种与P型聚合物半导体混合，并通过热过程一次在界面区域官能化。与原始壳体的113.4kΩcm相比，在引入界面官能化至15.9kΩcm后，将（c）值显着降低。此外，与原始案例相比，OFET器件的平均场效应率增加了3多倍，以最大值为0.25cm（2）v（-1）（-1）（0.041cm（2） v（-1）s（-1）），阈值电压也会收敛到零。本研究通过解决界面优化过程的不适来克服了与控制ofters的顶部接触界面相关的现有结果中所观察到的所有缺点。

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