• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >High-Resolution Monolithic Integrated Tribotronic InGaZnO Thin-Film Transistor Array for Tactile Detection
【24h】

High-Resolution Monolithic Integrated Tribotronic InGaZnO Thin-Film Transistor Array for Tactile Detection

机译：高分辨率单片集成跨触发器薄膜晶体管阵列，用于触觉检测

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Tactile detection is a crucial technology in many fields, such as electronic skin, touch screen control, human prostheses, and screen fingerprint identification. Tribotronics has demonstrated active mechanosensation from external mechanical stimuli, which greatly enriches the sensing mechanisms of tactile detection. In this work, a monolithic integrated indium-gallium-zinc-oxide (InGaZnO or IGZO) thin-film transistor (TFT) array is developed for high-resolution tactile detection. By using the conventional semiconductor fabrication processes, each IGZO TFT cell in the array shows uniform electrical performance. In addition, the drain-source current can be individually tuned by the electrostatic potential generated by the contact electrification between a movable gate and the gate dielectric. The monolithic integrated array displays a relatively high resolution of 12 pixels per inch and can realize a millimeter-level tactile perception and motion tracking. This work presents a facile and viable strategy toward microano-scale tribotronics, which can realize high-resolution and large-scale tactile detection.
机译：触觉检测是许多领域的重要技术，例如电子皮肤，触摸屏控制，人假体和屏幕指纹识别。 Tricotronics已经证明了外部机械刺激的活性机械化，这极大地丰富了触觉检测的传感机制。在这项工作中，开发了一种单片集成铟 - 镓 - 氧化锌（Ingazno或IgZo）薄膜晶体管（TFT）阵列，用于高分辨率触觉检测。通过使用传统的半导体制造工艺，阵列中的每个IGZO TFT单元表示均匀的电气性能。另外，漏源电流可以通过由可移动栅极和栅极电介质之间的接触电流产生的静电电位单独调节。单片集成阵列显示每英寸相对高的分辨率为12像素，并且可以实现毫米级触觉感知和运动跟踪。这项工作展示了朝着微/纳米级摩擦道核素的展开和可行的策略，可实现高分辨率和大规模的触觉检测。

著录项

  • 来源
    《Advanced Functional Materials》 |2020年第35期|2002613.1-2002613.8|共8页
  • 作者

    Cao Yuanzhi; Bu Tianzhao; Fang Chunlong; Zhang Chao; Huang Xiaodong; Zhang Chi;

  • 作者单位

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China|Southeast Univ Key Lab MEMS Minist Educ Nanjing 210096 Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China;

    Chinese Acad Sci Beijing Key Lab Micronano Energy & Sensor Beijing Inst Nanoenergy & Nanosyst CAS Ctr Excellence Nanosci Beijing 100083 Peoples R China;

    Southeast Univ Key Lab MEMS Minist Educ Nanjing 210096 Peoples R China;

    Southeast Univ Key Lab MEMS Minist Educ Nanjing 210096 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    InGaZnO; tactile detection; thin-film transistors; triboelectric nanogenerators; tribotronics;

    机译：ingazno;触觉检测;薄膜晶体管;摩擦纳米电磁炉;TREMOTRONICS;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号