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2D Ruddlesden-Popper Perovskite Single Crystal Field-Effect Transistors

机译：2D Ruddlesden-Popper Perovskite单晶场效应晶体管

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摘要

2D Ruddlesden-Popper perovskites (2D PVKs) have attracted huge interest because of their excellent optoelectronic properties, yet the understanding of their electrical properties is inadequate due to the difficulties in obtaining 2D PVK field-effect transistors (FETs) with decent performance. Herein, the fabrication and characterization of 2D PVK ((BA)(2)(MA)(n)-1PbnI3n+1) single crystal FETs are reported, which exhibit reliable field effect electrical characteristics at low temperatures. Kelvin probe force microscopy (KPFM) results reveal that both ion migration and contact resistance seriously degrade device performance. While ion migration can be suppressed at low temperatures, contact resistance seems to fundamentally determine device performance. On one hand, Schottky contacts are observed to form at the metal/2D PVK interface because of Fermi level pinning, resulting in significant charge injection resistance, although this can be remarkably improved by replacing Au electrodes with Ca. On the other hand, the out-of-plane mobility is found to be three orders of magnitude lower than the in-plane mobility in 2D PVKs, causing large interlayer transport resistance. Thus, a low work-function metal and a thin crystal are important for achieving high device performance. This work provides important experimental insights into fabrication and electrical properties of 2D PVK FETs.
机译：2D Ruddlesden-Popper Perovskites（2D PVKS）由于它们出色的光电性质而引起了巨大的兴趣，但由于获得具有体面性能的2D PVK场效应晶体管（FET），因此对其电性能的理解是不充分的。这里，报道了2D PVK（（BA）（2）（2）（2）（MA）（N）（N）（N）-1PBNI3N + 1）单晶FET的制造和表征，其在低温下表现出可靠的场效应电特性。 Kelvin探针力显微镜（KPFM）结果表明，离子迁移和接触阻力都严重降低了装置性能。虽然在低温下可以抑制离子迁移，但接触电阻似乎从根本上确定了设备性能。一方面，由于费米水平钉扎，观察到肖特基触点在金属/ 2D PVK界面处形成，导致显着的电荷注射电阻，尽管通过用CA替换Au电极可以显着改善这一点。另一方面，发现外平面的移动性比在2D PVK中的面内移动性低三个数量级，导致大层间传输电阻。因此，低功函数金属和薄晶体对于实现高器件性能很重要。这项工作为2D PVK FET的制造和电性能提供了重要的实验见解。

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  • 来源
    《Advanced Functional Materials》 |2021年第1期|2005662.1-2005662.11|共11页
  • 作者

    Liu Fengjing; Wang Liang; Wang Jiawei; Wang Feng; Chen Yiyi; Zhang Shuai; Sun Huijuan; Liu Jia; Wang Gongtang; Hu Yuanyuan; Jiang Chao;

  • 作者单位

    Natl Ctr Nanosci & Technol CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci Beijing 100190 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices & Integrated Technol Beijing 100029 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Key Lab Nanosys & Hierarch Fabricat CAS Ctr Excellence Nanosci Beijing 100049 Peoples R China;

    Shandong Normal Univ Sch Phys & Elect Jinan 250358 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci Beijing 100190 Peoples R China|Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China;

    Univ Chinese Acad Sci Sch Nanosci & Technol Beijing 100049 Peoples R China|Natl Ctr Nanosci & Technol CAS Key Lab Nanosys & Hierarch Fabricat CAS Ctr Excellence Nanosci Beijing 100049 Peoples R China;

    Shandong Normal Univ Sch Phys & Elect Jinan 250358 Peoples R China;

    Hunan Univ Key Lab Micro Nano Optoelect Devices Minist Educ Sch Phys & Elect Changsha 410082 Peoples R China|Hunan Univ Sch Phys & Elect Hunan Prov Key Lab Low Dimens Struct Phys & Devic Changsha 410082 Peoples R China;

    Natl Ctr Nanosci & Technol CAS Key Lab Standardizat & Measurement Nanotechno Beijing 100190 Peoples R China|Natl Ctr Nanosci & Technol CAS Ctr Excellence Nanosci Beijing 100190 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    2D perovskites; field-effect transistors; interlayer transport; metal; semiconductor contacts; single crystal;

    机译：2D Perovskites;场效应晶体管;层间运输;金属;半导体触点;单晶;

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