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首页> 外文期刊>Advanced Functional Materials >Acceleration of Crystallization Kinetics in Ge-Sb-Te-Based Phase-Change Materials by Substitution of Ge by Sn
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Acceleration of Crystallization Kinetics in Ge-Sb-Te-Based Phase-Change Materials by Substitution of Ge by Sn

机译：通过SN替代Ge的Ge-Sb-Te型相变材料中的结晶动力学加速

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摘要

Thin films of (Ge1-xSnx)(8)Sb(2)Te(11)are prepared to study the impact of Sn-substitution on properties relevant for application in phase-change memory, a next-generation electronic data storage technology. It is expected that substitution decreases the crystallization temperature, but it is not known how the maximum crystallization rate is affected. Ge(8)Sb(2)Te(11)is chosen from the (GeTe)(y)(Sb2Te3)(1-)(y)system of phase-change materials as a starting point due to its higher crystallization temperature as compared to the common material Ge2Sb2Te5. In situ X-ray diffraction at 5 K min(-1)heating rate is performed to determine the crystallization temperature and the resulting structure. To measure the maximum crystallization rate, femtosecond optical pulses that heat the material repetitively and monitor the resulting increase of optical reflectance are used. Glasses over the entire composition range are prepared using a melt-quenching process. While atx = 0, 97, subsequent pulses are required for crystallization, one single pulse is enough to achieve the same effect atx = 0.5. The samples are further characterized by optical ellipsometry and calorimetry. The combined electrical and optical contrast and the ability to cycle between states with single femtosecond pulses renders Ge(4)Sn(4)Sb(2)Te(11)promising for photonics applications.
机译：（GE1-XSNX）（8）SB（2）TE（11）的薄膜准备研究SN替代对相变存储器应用的性能，下一代电子数据存储技术的影响。预期取代降低结晶温度，但尚不知道如何影响最大结晶率。 GE（8）SB（2）TE（11）选自相变材料的（GetE）（y）（Sb2te3）（1 - ）（1 - ）（1 - ）（1 - ）（1 - ）（1 - ）（1 - ）（1 - ）系统，作为其比较较高的结晶温度而导致的起始点通用材料Ge2sb2te5。在5 k min（-1）的原位X射线衍射下进行，进行加热速率以确定结晶温度和所得结构。为了测量最大结晶速率，使用重复加热材料的飞秒光学脉冲，并监测所得到的光学反射率的增加。使用熔融淬火过程制备整个组成范围内的眼镜。虽然ATX = 0,97，结晶所需的后续脉冲需要，单个脉冲足以实现ATX = 0.5的相同效果。通过光学椭偏测量和量热法来进一步表征样品。组合电气和光学对比度和单一飞秒脉冲之间的循环能力呈现GE（4）SN（4）SB（2）TE（11）对光子学应用有望。

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