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High-Performance Near-Infrared Photodetectors Based on Surface-Doped InSe

机译：基于表面掺杂内部的高性能近红外光电探测器

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摘要

2D InSe is one of the semimetal chalcogenides that has been recently given attention thanks to its excellent electrical properties, such as high mobility near 1000 cm(2)V(-1)s(-1)and moderate band gap of approximate to 1.26 eV suitable for IR detection. Here, high-performance visible to near-infrared (470-980 nm wavelength (lambda)) photodetectors using surface-doped InSe as a channel and few-layer graphenes (FLG) as electrodes are reported, where the InSe top region is relativelyp-doped using AuCl3. The surface-doped InSe photodetectors show outstanding performance, achieving a photoresponsivity (R) of approximate to 19 300 A W(-1)and a detectivity (D*) of approximate to 3 x 10(13) Jones at lambda = 470 nm, andRof approximate to 7870 A W(-1)andD* of approximate to 1.5 x 10(13) Jones at lambda = 980 nm, superior to previously reported 2D material-based IR photodetectors operating without an applied gate bias. Surface doping using AuCl(3)renders a band bending at the junction between the InSe surface and the top FLG contact, which facilitates electron-hole pair separation and immediate photodetection. Multiple doped or undoped InSe photodetectors with different device structures are investigated, providing insight into the photodetection mechanism and optimizing performance. Encapsulation with hexagonal boron nitride dielectric also allows for 3-month stability.
机译：由于其出色的电性能，如最高的电性能，如近1000厘米（2）v（-1）的高迁移率，以及近似为1.26eV的中等带隙，最近被最近致以注意的半硫属化合物之一。适用于IR检测。这里，近红外线可见的高性能（470-980 nm波长（Lambda））光电探测器作为电极作为通道和几层石墨烯（FLG），其中Inse顶部区域是相对的 - 使用AUCL3掺杂。表面掺杂的Inse光电探测器显示出出色的性能，实现了近似值的光响应率（R）和近似约为3 x 10（13）jones的探测器（d *）在lambda = 470nm，androf近似到7870 AW（-1）andd *在Lambda = 980nm的1.5 x 10（13）琼松，优于先前报道的基于材料的IR光电探测器，而没有施加的栅极偏压。使用AuCl（3）的表面掺杂使得在内部表面和顶部FLG接触之间的连接处弯曲，这有利于电子 - 孔对分离和立即进行光电检测。研究了具有不同器件结构的多个掺杂或未掺杂的INSE光电探测器，为光电检测机构提供了深入研究和优化性能。用六边形氮化硼电介质封装也允许3个月的稳定性。

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