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In Situ Assembly of MoS_x Thin-Film through Self-Reduction on p-Si for Drastic Enhancement of Photoelectrochemical Hydrogen Evolution

机译:通过对P-Si的自我减少进行光电化学氢进化的自我减少来实现MOS_X薄膜的原位组装

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摘要

Strong coupling between the Si photocathode and a low-cost cocatalyst is of great significance for enhancing the photoelectrochemical hydrogen evolution. Here, a facile method is proposed to in situ assemble amorphous MoSx(a-MoSx) thin-film onto a single crystal p-Si through a self-reduction mechanism to achieve strong coupling. In the process of self-reduction, the (MoS4)(2-)anion is reduced to form a-MoS(x)by the oxidation of H-Si to form SiOx, which is etched further to form H-Si again in the hydrofluoric aqueous solution. The cyclic formation of H-Si and SiO(x)plays a decisive role in the continuous deposition of a-MoS(x)and provides a unique way to synthesize metal sulfides. Such a-MoSx/p-Si photocathode exhibits an excellent activity, achieving the optimal onset potential of +0.31 V(RHE)and the current density of -28.2 mA cm(-2)at 0 V(RHE)with a Faradaic efficiency close to 98%, respectively, outperforming the thermally exfoliated 2H-MoS(2)and 1T-MoS(2)cocatalysts on p-Si and comparable to the previous studies. The proposed method for uniform deposition at room temperature is simple to carry out and can be used for fabricating other Si-based photoelectrodes.
机译:Si光电阴极与低成本助催化剂之间的强耦合对于增强光电化学氢进化具有重要意义。这里,通过自我减少机构提出一种容易方法,以通过自我还原机构在单晶P-Si上以实现强耦合。在自我减少的过程中,通过H-Si的氧化来减少(MOS4)(2-)阴离子以形成SiOx,形成SiOx,其进一步蚀刻以再次形成H-Si氢氟水溶液。 H-Si和SiO(X)的环状形成在连续沉积A-MOS(X)中起着决定性作用,并提供了合成金属硫化物的独特方式。这种A-MOSX / P-Si光电阴极表现出优异的活性,实现+0.31V(RHE)的最佳发作电位,以及在0V(RHE)的电流密度为-28.2 mA cm(-2),具有距离游览效率关闭分别优于98%,优于P-Si上的热输出2H-MOS(2)和1T-MOS(2)助催化剂并与先前的研究相媲美。在室温下均匀沉积的所提出的方法简单地进行,并且可用于制造其他基于Si的光电极。

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  • 来源
    《Advanced Functional Materials》 |2021年第3期|2007071.1-2007071.9|共9页
  • 作者单位

    Nanjing Univ Aeronaut & Astronaut Coll Mat Sci & Technol Jiangsu Key Lab Electrochem Energy Storage Techno Nanjing 210016 Peoples R China|Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan|Hokkaido Univ Grad Sch Chem Sci & Engn Sapporo Hokkaido 0600814 Japan;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan|Hokkaido Univ Grad Sch Chem Sci & Engn Sapporo Hokkaido 0600814 Japan;

    Nanjing Univ Aeronaut & Astronaut Coll Energy & Power Engn Nanjing 210016 Peoples R China;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Adv Ind Sci & Technol Res Inst Adv Elect & Photon 1-1-1 Umezono Tsukuba Ibaraki 3058568 Japan;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan|Hokkaido Univ Grad Sch Chem Sci & Engn Sapporo Hokkaido 0600814 Japan;

    Nanjing Univ Aeronaut & Astronaut Coll Mat Sci & Technol Jiangsu Key Lab Electrochem Energy Storage Techno Nanjing 210016 Peoples R China;

    Natl Inst Mat Sci NIMS Int Ctr Mat Nanoarchitecton WPI MANA 1-1 Namiki Tsukuba Ibaraki 3050044 Japan|Hokkaido Univ Grad Sch Chem Sci & Engn Sapporo Hokkaido 0600814 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    amorphous MoSx; in situ assembly; photoelectrochemical hydrogen evolution; self-reduction; silicon photocathode;

    机译:非晶态MOSX;原位组装;光电化妆化学氢气进化;自我减少;硅光电阴极;

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