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All-Group Ⅳ Transferable Membrane Mid-Infrared Photodetectors

机译：全组ⅳ可转移膜中红外光电探测器

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摘要

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice strain and engineer complex heterostructures enabling a variety of innovative applications. With this perspective, herein this platform is exploited to tune simultaneously the lattice parameter and bandgap energy in group IV GeSn semiconductor alloys. As Sn content is increased to reach a direct bandgap, these semiconductors become metastable and typically compressively strained. It is shown that the relaxation in released membranes extends the absorption wavelength range deeper in the mid-infrared. Fully released Ge(0.83)Sn(0.17)membranes are integrated on silicon and used in the fabrication of broadband photodetectors operating at room temperature with a record wavelength cutoff of 4.6 mu m, without compromising the performance at shorter wavelengths down to 2.3 mu m. These membrane devices are characterized by two orders of magnitude reduction in dark current as compared to as-grown strained epitaxial layers. A variety of experimental tools and optimized calculations are used to discuss the crystalline quality, composition uniformity, lattice strain, and the electronic band structure of the investigated materials and devices. The ability to engineer all-group IV transferable mid-infrared photodetectors lays the groundwork to implement scalable and flexible sensing and imaging technologies exploiting these integrative, silicon-compatible strained-relaxed GeSn membranes.
机译：半导体膜作为多功能类的纳米材料，以控制晶格应变和工程师复杂的异质结构，从而实现各种创新应用。利用这种观点，本文该平台被利用在IV组GESN半导体合金组中同时进行晶格参数和带隙能量。随着SN含量增加以达到直接的带隙，这些半导体变得稳定并且通常压缩地应变。结果表明，释放膜中的弛豫延伸了中红外线中的吸收波长范围。完全释放的GE（0.83）Sn（0.17）膜整合在硅上，并用于在室温下操作的宽带光电探测器的制造，记录波长截止为4.6μm，而不会损害低波长下降至2.3μm的性能。与生长的紧张外延层相比，这些膜装置的特征在于暗电流的两个级别降低。各种实验工具和优化的计算用于讨论晶体质量，组成均匀性，晶格应变和所研究的材料和装置的电子带结构。工程师All-Group IV可转换的中红外光电探测器的能力将奠定了实现可扩展和灵活的感应和成像技术，利用这些一体化硅兼容的紧张的GESN膜的可扩展和灵活的感应和成像技术。

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